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首页> 外文期刊>CERAMICS INTERNATIONAL >Realization of a self-powered ZnSnO MSM UV photodetector that uses surface state controlled photovoltaic effect
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Realization of a self-powered ZnSnO MSM UV photodetector that uses surface state controlled photovoltaic effect

机译：实现一种使用表面状态控制光伏效应的自动ZnSNO MSM UV光电探测器

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摘要

Self-powered ultraviolet (UV) photodetectors (PDs) that use a vertical p-n junction generally involve a complex fabrication process if they are to be integrated with optoelectronic integrated circuits (OEICs). This study demonstrates the fabrication of a self-powered metal-semiconductor-metal (MSM) UV PD with simple planar structure using nontoxic and earth abundant ZnSnO (ZTO). The self-powering characteristic is realized using a localized UV-assisted thermal annealing (LUV-TA) process that selectively modifies the surface states underneath different contacts and creates asymmetric Schottky barrier heights (SBHs) for the MSM PD. The a-ZTO MSM PD with assymmetric SBHs operates at a zero bias and has a responsivity of 18.2 mA/W at 350 nm. The open-circuit voltage is 0.40 V under UV illumination at a wavelength of 365 nm (50 mW/cm(2)). The device exhibits a fast response speed, with a rise time of 38 ms and a decay time of 180 ms. This study demonstrates that this strategy can be extended to other MSM PDs, particularly those that use an amorphous oxide semiconductor as the active layer.
机译：使用垂直p-n结的自供电紫外（UV）光电探测器（PDs）如果要与光电集成电路（OEIC）集成，通常需要复杂的制造过程。本研究展示了使用无毒且富含地球的ZnSnO（ZTO）制备具有简单平面结构的自供电金属-半导体-金属（MSM）UV-PD。自供电特性通过局部UV辅助热退火（LUV-TA）过程实现，该过程选择性地修改不同触点下的表面状态，并为MSM PD创建不对称肖特基势垒高度（SBH）。带有不对称SBHs的a-ZTO MSM PD在零偏压下工作，在350 nm处具有18.2 mA/W的响应度。在波长为365nm（50mW/cm（2））的紫外光照射下，开路电压为0.40V。该器件具有快速响应速度，上升时间为38ms，衰减时间为180ms。该研究表明，该策略可扩展到其他MSM PDs，尤其是使用非晶氧化物半导体作为活性层的MSM PDs。

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