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Controllable Synthesis and Effects of Porphyrin Copper Nanostructures on Photoelectric Properties

机译:卟啉铜纳米结构对光电性能的可控合成及其影响

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摘要

A variety of organic semiconductor nanostructures have been already reported for photoelectric applications; however, there are a few systematic studies on the dependence of their photocurrent on nanostructures. Here, 0D, 1D, 2D, and 3D nanostructures of 5,10,15,20-tetrakis(4-carboxyphenyl) porphyrin copper (CuTCPP) are successfully constructed via liquid-phase chemical methods. Structural characterization shows that 0D and 1D nanostructures should result from the p-p stacking of CuTCPP molecules, while 2D and 3D ones are mainly from the in-plane aggregation via the linkage of -COOH with the Cu ion. The photoelectric properties of CuTCPP-based nanostructures are investigated to evaluate the effect of shape, size, and structure. A huge difference in photocurrent response is found, as compared to the raw material (0.09 mu A/cm(2)) and 0D (0.17 mu A/cm(2)), 1D (2.24 mu A/cm(2)), 2D (0.4 mu A/cm(2)), and 3D (0.93 mu A/cm(2)) nanostructures. Further study reveals that the 1D nanostructure exhibits the lowest impedance and the longest exciton lifetime, strongly indicating that the photocurrent of the metal porphyrin nanostructure should be mainly limited in an in-plane exciton with a shorter lifetime than in an intermolecular one. This work provides a clear strategy to design molecule-based photoelectric nanomaterials.
机译:各种各样的有机半导体纳米结构已经被报道用于光电应用;然而,关于它们的光电流对纳米结构的依赖性,目前还没有一些系统的研究。在这里,通过液相化学方法成功构建了5,10,15,20-四(4-羧基苯基)卟啉铜(CuTCPP)的0D、1D、2D和3D纳米结构。结构表征表明,0D和1D纳米结构应来自CuTCPP分子的p-p堆积,而2D和3D纳米结构主要来自通过-COOH与铜离子连接的面内聚集。研究了CuTCPP基纳米结构的光电性能,以评估形状、尺寸和结构的影响。与原材料(0.09μA/cm(2))和0D(0.17μA/cm(2))、1D(2.24μA/cm(2))、2D(0.4μA/cm(2))和3D(0.93μA/cm(2))纳米结构相比,发现光电流响应存在巨大差异。进一步的研究表明,一维纳米结构具有最低的阻抗和最长的激子寿命,这强烈表明金属卟啉纳米结构的光电流应主要限制在面内激子中,其寿命比分子间激子短。这项工作为设计基于分子的光电纳米材料提供了清晰的策略。

著录项

  • 来源
    《Crystal growth & design》 |2021年第6期|共10页
  • 作者单位

    Fujian Normal Univ Coll Chem &

    Mat Sci Fuzhou 350007 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter Key Lab Design &

    Assembly Funct Nanostruct Fuzhou 350002 Fujian Peoples R China;

    Fujian Sci &

    Technol Innovat Lab Optoelect Inform Fuzhou 350108 Fujian Peoples R China;

    Fujian Sci &

    Technol Innovat Lab Optoelect Inform Fuzhou 350108 Fujian Peoples R China;

    Fujian Sci &

    Technol Innovat Lab Optoelect Inform Fuzhou 350108 Fujian Peoples R China;

    Fujian Sci &

    Technol Innovat Lab Optoelect Inform Fuzhou 350108 Fujian Peoples R China;

    Fujian Sci &

    Technol Innovat Lab Optoelect Inform Fuzhou 350108 Fujian Peoples R China;

    Fujian Normal Univ Coll Chem &

    Mat Sci Fuzhou 350007 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter Key Lab Design &

    Assembly Funct Nanostruct Fuzhou 350002 Fujian Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 晶体学;
  • 关键词

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