783 nm wavelength stabilized DBR tapered diode lasers with a 7 W output power

Sumpf Bernd; Theurer Lara Sophie; Maiwald Martin; Mueller Andre; Maassdorf Andre; Fricke Joerg; Ressel Peter; Traenkle Guenther

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783 nm wavelength stabilized DBR tapered diode lasers with a 7 W output power

机译：783 NM波长稳定DBR锥形二极管激光器，具有7 W输出功率

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Wavelength stabilized distributed Bragg reflector (DBR) tapered diode lasers at 783 nm will be presented. The devices are based on GaAsP single quantum wells embedded in a large optical cavity leading to a vertical far field angle of about 29 degrees (full width at half maximum). The 3-inch (7.62 cm) wafers are grown using metalorganic vapor phase epitaxy. In a full wafer process, 4 mm long DBR tapered lasers are manufactured. The devices consist of a 500 mu m long 10th order surface DBR grating that acts as rear side mirror. After that, a 1 mm long ridge waveguide section is realized for lateral confinement, which is connected to a 2.5 mm long flared section having a full taper angle of 6 degrees. At an injection current of 8 A, a maximum output power of about 7 W is measured. At output powers up to 6 W, the measured emission width limited by the resolution of the spectrometer is smaller than 19 pm. Measured at 1/e(2) level at this output power, the lateral beam waist width is 11.5 mu m, the lateral far field angle 12.5 degrees, and the lateral beam parameter M-2 2.5. The respective parameters measured using the second moments are 31 mu m, 15.2 degrees, and 8.3.70% of the emitted power is originated from the central lobe. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.

机译：将介绍783nm波长稳定分布布拉格反射器（DBR）锥形二极管激光器。该器件基于GaAsP单量子阱，嵌入一个大的光学腔中，导致垂直远场角约为29度（最大宽度为一半）。3英寸（7.62厘米）的晶片采用金属有机气相外延生长。在全晶圆工艺中，制造了4毫米长的DBR锥形激光器。该装置由一个500μm长的10阶表面DBR光栅组成，用作后视镜。之后，实现了1 mm长的脊波导段用于横向约束，该波导段连接到2.5 mm长的扩口段，该扩口段的全锥角为6度。在8A的注入电流下，测量到的最大输出功率约为7W。在输出功率高达6 W时，受光谱仪分辨率限制的测量发射宽度小于19 pm。在该输出功率下，在1/e（2）级测量，横向波束腰宽为11.5μm，横向远场角为12.5度，横向波束参数为m-2.5。使用二阶矩测量的各个参数为31μm，15.2度，发射功率的8.3.70%来自中心瓣。由光学学会根据知识共享署名4.0许可证的条款出版。

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《Applied optics》 |2021年第18期|共6页
作者
Sumpf Bernd; Theurer Lara Sophie; Maiwald Martin; Mueller Andre; Maassdorf Andre; Fricke Joerg; Ressel Peter; Traenkle Guenther;
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Ferdinand Braun Inst gGmbH Leibniz Inst Hochstfrequenztech Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

Ferdinand Braun Inst gGmbH Leibniz Inst Hochstfrequenztech Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

Ferdinand Braun Inst gGmbH Leibniz Inst Hochstfrequenztech Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

Ferdinand Braun Inst gGmbH Leibniz Inst Hochstfrequenztech Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

Ferdinand Braun Inst gGmbH Leibniz Inst Hochstfrequenztech Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

Ferdinand Braun Inst gGmbH Leibniz Inst Hochstfrequenztech Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

Ferdinand Braun Inst gGmbH Leibniz Inst Hochstfrequenztech Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

Ferdinand Braun Inst gGmbH Leibniz Inst Hochstfrequenztech Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

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783 nm wavelength stabilized DBR tapered diode lasers with a 7 W output power

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