Speed characterization of p-i-n photodiode based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact at 1.9 mu m

Vlasov Dmitrii; Konovalov Gleb; Andreev Igor; Yakovlev Yury; Voropaev Vasilii; Donodin Aleksandr; Tarabrin Mikhail; Batov Daniil; Kunitsyna Ekaterina; Lazarev Vladimir

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Speed characterization of p-i-n photodiode based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact at 1.9 mu m

机译：基于Gasb / GaInassb / Gaalassb异质结构的P-I-N光电二极管的速度表征在1.9 mu m的前桥接触

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We report a study of the response function parameters (amplitude and rise/fall time) of a high-speed GaSb/GaInAsSb/GaAlAsSb photodiode operating at 1.9 mu m as a function of optical input power and reverse bias voltage. The experimental measurement results yield the optimal pulse energy and optimal reverse bias voltage for the photodiode. The 44 ps minimal rise time of the response function and 3.6 GHz bandwidth are achieved under a 3V reverse bias voltage and pulse energy in the 0.27-2.5 pJ range. (C) 2021 Optical Society of America

机译：本文报道了一种高速GaSb/GaInAsSb/GaAlAsSb光电二极管的响应函数参数（振幅和上升/下降时间）随光输入功率和反向偏置电压变化的研究。实验测量结果给出了光电二极管的最佳脉冲能量和最佳反向偏置电压。在3V反向偏置电压和0.27-2.5PJ范围内的脉冲能量下，响应函数的最小上升时间为44ps，带宽为3.6GHz。（2021）美国光学学会

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《Applied optics》 |2021年第8期|共6页
作者
Vlasov Dmitrii; Konovalov Gleb; Andreev Igor; Yakovlev Yury; Voropaev Vasilii; Donodin Aleksandr; Tarabrin Mikhail; Batov Daniil; Kunitsyna Ekaterina; Lazarev Vladimir;
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作者单位

Bauman Moscow State Tech Univ Sci &

Educ Ctr Photon &

IR Technol Moscow 105005 Russia;

Ioffe Inst St Petersburg 194021 Russia;

Ioffe Inst St Petersburg 194021 Russia;

Ioffe Inst St Petersburg 194021 Russia;

Bauman Moscow State Tech Univ Sci &

Educ Ctr Photon &

IR Technol Moscow 105005 Russia;

Aston Univ Aston Inst Photon Technol Birmingham B4 7ET W Midlands England;

Bauman Moscow State Tech Univ Sci &

Educ Ctr Photon &

IR Technol Moscow 105005 Russia;

Bauman Moscow State Tech Univ Sci &

Educ Ctr Photon &

IR Technol Moscow 105005 Russia;

Ioffe Inst St Petersburg 194021 Russia;

Bauman Moscow State Tech Univ Sci &

Educ Ctr Photon &

IR Technol Moscow 105005 Russia;

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正文语种 eng
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1. Growth and Characterization of GaSb-Based Type-Ⅱ InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection [J] . 王国伟, 徐应强, 郭杰, 中国物理快报：英文版 . 2010,第007期
2. Growth and Characterization of GaSb-Based Type-Ⅱ InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection [J] . WANG Guo-Wei, Xu Ying-Qiang, GUO Jie, 中国物理快报：英文版 . 2010,第007期
3. High-Speed Photodiodes for the Mid-Infrared Spectral Region 1.2-2.4 μm Based on GaSb/GaInAsSb/GaAlAsSb Heterostructures with a Transmission Band of 2-5 GHz [J] . I. A. Andreev, O. Yu. Serebrennikov, G. S. Sokolovskii, Semiconductors . 2013,第8期

机译：基于GaSb / GaInAsSb / GaAlAsSb异质结构，传输频带为2-5 GHz的中红外光谱区1.2-2.4μm的高速光电二极管
4. WET AND DRY ETCHING OF GaSb/GaInAsSb/GaAlAsSb PHOTODIODE HETEROSTRUCTURES [J] . T. T. PIOTROWSKI, E. PAPIS, M. GUZIEWICZ Electron Technology . 1998,第3a4期

机译：GaSb / GaInAsSb / GaAlAsSb光电二极管异质结构的湿法和干法蚀刻
5. Low-noise photodiodes based on GaSb/GaInAsSb/AlGaAsSb double heterostructures for the 1-4.8 mu m spectral range [J] . Zhurtanov BE, Ilinskaya ND, Imenkov AN, Semiconductors . 2008,第4期

机译：基于GaSb / GaInAsSb / AlGaAsSb双异质结构的低噪声光电二极管，光谱范围为1-4.8μm
6. Operating speed measurement of photodetector based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact for detecting ultrashort pulses at wavelengths of 1.55 and 1.9 μm [C] . Dmitrii S. Vlasov, Gleb G. Konovalov, Igor A. Andreev, International Conference on Pulsed Lasers and Laser Applications . 2019

机译：基于Gasb / GaInassb / Gaalassb异质结构的光电探测器的操作速度测量与前桥接触，用于检测波长为1.55和1.9μm的超短脉冲
7. Characterization of Power-to-Phase Conversion in High-Speed P-I-N Photodiodes [O] . Taylor, J., Datta, S., Hati, A., 2011

机译：高速p-I-N中功率相转换的表征光电二极管

Speed characterization of p-i-n photodiode based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact at 1.9 mu m

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