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All-normal-dispersion dissipative soliton fiber laser using an offset-splicing graded-index-multimode-fiber-based saturable absorber

机译:使用偏移剪接分级索引 - 多模纤维的可饱和吸收器的全正常分散耗散孤子光纤激光器

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摘要

All-normal-dispersion (ANDi) dissipative solit on mode-locking is realized based on nonlinear multimode interference (NMI), which is implemented by offset-splicing three pieces of graded-index multimode fibers (GIMFs) and acts as a saturable absorber. The higher-order modes can be excited by offset-splicing GIMFs (OS-GIMFs), which eliminates adding the step multimode fiber (SIMF) into the resonant cavity and the precise length requirement of the SIMF. In the experiment, the stable dissipative soliton mode-locking at 1030 nm can be obtained with the pulse width of 7.3 ps and the repetition rate of 20.52 MHz, and the bandwidth is 6.98 nm. The maximum output is 3.2 mW with the pump power of 257 mW. The OS-GIMFs can significantly improve the saturated absorption and can easily realize dissipative soliton mode-locking in ANDi regions, which makes it attractive in ultrafast photonics. (C) 2021 Optical Society of America
机译:全正常色散(ANDi)耗散孤子锁模是在非线性多模干涉(NMI)的基础上实现的,NMI是由三根渐变折射率多模光纤(GIMF)偏置拼接而成,起到饱和吸收体的作用。高阶模式可以通过偏置拼接GIMF(OS GIMF)激发,这消除了在谐振腔中添加阶梯多模光纤(SIMF)以及SIMF的精确长度要求。实验中,脉冲宽度为7.3ps,重复频率为20.52mhz,带宽为6.98nm,可在1030nm处获得稳定的耗散孤子锁模。最大输出功率为3.2 mW,泵功率为257 mW。OS-GIMFs可以显著提高饱和吸收,并且可以很容易地在ANDi区域实现耗散孤子锁模,这使得它在超快光子学中具有吸引力。(2021)美国光学学会

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  • 来源
    《Applied optics》 |2021年第4期|共6页
  • 作者单位

    Changchun Univ Sci &

    Technol State Key Lab High Power Semicond Lasers Changchun 130022 Peoples R China;

    Changchun Univ Sci &

    Technol State Key Lab High Power Semicond Lasers Changchun 130022 Peoples R China;

    Changchun Univ Sci &

    Technol State Key Lab High Power Semicond Lasers Changchun 130022 Peoples R China;

    Changchun Univ Sci &

    Technol State Key Lab High Power Semicond Lasers Changchun 130022 Peoples R China;

    Changchun Univ Sci &

    Technol State Key Lab High Power Semicond Lasers Changchun 130022 Peoples R China;

    Changchun Univ Sci &

    Technol State Key Lab High Power Semicond Lasers Changchun 130022 Peoples R China;

    Changchun Univ Sci &

    Technol State Key Lab High Power Semicond Lasers Changchun 130022 Peoples R China;

    Changchun Univ Sci &

    Technol State Key Lab High Power Semicond Lasers Changchun 130022 Peoples R China;

    Changchun Univ Sci &

    Technol State Key Lab High Power Semicond Lasers Changchun 130022 Peoples R China;

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