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Engineered nanophotonic waveguide with ultra-low dispersion

机译：具有超低分散的工程纳米光波导

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摘要

A silicon-based engineered hybrid plasmonic waveguide with ultra-low dispersion is proposed. The ridge-shaped structure of the nanophotonic waveguide enables nano-scale confinement with electrically tunable characteristics using the plasma dispersion effect in silicon. The waveguide exhibits ultra-low dispersion of 1.28 ps(2)/m at telecommunication wavelength (1550 nm) in C band together with dual flatband dispersion over a wavelength range of 370 nm. The hybrid plasmonic mode is made to be confined in 15 nm thick SiO2 with a propagation loss of 15.3 dB/mm utilizing the engineered ridge structure comprising Si, SiO2, and gold. In addition, the proposed waveguide shows six zero-dispersion wavelengths. The imaginary and real parts of the effective refractive index of the guided hybrid plasmonic mode are reported to be tunable with the applied voltage. The reported numerical results can pave the way for achieving intensity modulators and other electrically tunable devices at telecommunication wavelengths. The ultra-low dispersion and electrical tuning make this nanophotonic waveguide an absolute contender for applications including efficient nonlinear signal processing such as wide wavelength conversion based on four-wave mixing, supercontinuum generation, and other nanoscale integrated photonic devices. (C) 2021 Optical Society of America
机译：提出了一种超低色散硅基工程化混合等离子体波导。纳米光子波导的脊状结构利用硅中的等离子体色散效应，实现了具有电可调特性的纳米尺度约束。该波导在通信波长（1550nm）的C波段表现出1.28ps（2）/m的超低色散，以及370nm波长范围内的双平带色散。利用由硅、二氧化硅和金组成的工程脊结构，将混合等离子体模式限制在15 nm厚的SiO2中，传播损耗为15.3 dB/mm。此外，提出的波导显示了六个零色散波长。据报道，波导混合等离子体模式的有效折射率的虚部和实部随外加电压可调。报道的数值结果可以为在电信波长上实现强度调制器和其他电可调器件铺平道路。超低色散和电调谐使这种纳米光子波导成为高效非线性信号处理应用的绝对竞争者，如基于四波混频的宽波长转换、超连续谱产生和其他纳米级集成光子器件。（2021）美国光学学会

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  • 来源
    《Applied optics》 |2021年第16期|共6页
  • 作者

    Mishra Rahul Dev; Singh Lalit; Rajput Swati; Kaushik Vishal; Srivastava Sulabh; Kumar Mukesh;

  • 作者单位

    Indian Inst Technol Dept Elect Engn Optoelect Nanodevice Res Lab Indore 453552 Madhya Pradesh India;

    Indian Inst Technol Dept Elect Engn Optoelect Nanodevice Res Lab Indore 453552 Madhya Pradesh India;

    Indian Inst Technol Dept Elect Engn Optoelect Nanodevice Res Lab Indore 453552 Madhya Pradesh India;

    Indian Inst Technol Dept Elect Engn Optoelect Nanodevice Res Lab Indore 453552 Madhya Pradesh India;

    Indian Inst Technol Dept Elect Engn Optoelect Nanodevice Res Lab Indore 453552 Madhya Pradesh India;

    Indian Inst Technol Dept Elect Engn Optoelect Nanodevice Res Lab Indore 453552 Madhya Pradesh India;

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