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Electrically controlled 1 x 2 tunable switch using a phase change material embedded silicon microring

机译：使用相变材料嵌入式硅微管电控1×2可调开关

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摘要

Phase change material Ge2Sb2Te5 (GST) has recently emerged as a highly promising candidate for photonic device applications owing to its high optical contrast, self-holding bi-stability, and fast material response. Here, we propose and analyze a 1 x 2 tunable switch using a GST embedded silicon microring resonator exploiting high optical contrast during GST phase change and a high thermo-optic coefficient of amorphous phase GST. Our device exhibits high extinction ratios of 25.57 dB and 18.75 dB at through and drop ports, respectively, with just a 1 mu m long GST layer. The two states of the switch are realizable by electrically inducing phase change in GST. For post phase change fromamorphous to crystalline and vice versa, the fall time down the 80% of phase transition temperature is similar to 66 ns and similar to 45 ns, respectively. The resonance wavelength shift per unit active length is 0.661 nm/mu m, and the tuning efficiency is 1.16nm/mW. The large wavelength tunability (4.63 nm) of the proposed switch makes it an attractive option for reconfigurable photonic integrated circuits. (C) 2021 Optical Society of America.
机译：相变材料Ge2Sb2Te5（GST）由于其高光学对比度、自保持双稳态和快速的材料响应，最近成为光子器件应用的一个非常有前途的候选材料。在这里，我们提出并分析了一种1 x 2可调谐开关，该开关使用GST嵌入硅微环谐振器，利用GST相变期间的高光学对比度和非晶相GST的高热光系数。我们的器件在直通端口和下降端口的消光比分别为25.57 dB和18.75 dB，只有1μm长的GST层。开关的两种状态可通过在GST中电诱导相变来实现。对于从非晶态到晶态的后相变，以及从晶态到非晶态的后相变，80%相变温度下的下降时间分别为66ns和45ns。单位有效长度的共振波长漂移为0.661nm/mum，调谐效率为1.16nm/mW。该开关的大波长可调谐性（4.63nm）使其成为可重构光子集成电路的一个有吸引力的选择。（2021）美国光学学会。

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  • 来源
    《Applied optics》 |2021年第13期|共10页
  • 作者

    Ali Nadir; Panepucci Roberto R.; Xie Yiwei; Dai Daoxin; Kumar Rajesh;

  • 作者单位

    Indian Inst Technol Roorkee Dept Phys Roorkee 247667 Uttar Pradesh India;

    Ctr Tecnol Informacao Renato Archer CTI Rodovia Dom Pedro I Km 143 6 BR-13069901 Campinas SP Brazil;

    Zhejiang Univ Coll Opt Sci &

    Engn Ctr Opt &

    Electromagnet Res Int Res Ctr Adv Photon State Key Lab Modern Opt I Hangzhou 310058 Peoples R China;

    Zhejiang Univ Coll Opt Sci &

    Engn Ctr Opt &

    Electromagnet Res Int Res Ctr Adv Photon State Key Lab Modern Opt I Hangzhou 310058 Peoples R China;

    Indian Inst Technol Roorkee Dept Phys Roorkee 247667 Uttar Pradesh India;

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