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Selective growth of ZnO nanorods by thickness contrast in In-doped ZnO quantum dots seed layer

机译：通过掺杂ZnO量子点种子层的厚度对比度对ZnO纳米棒的选择性生长

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Selective growth of ZnO nanorods (NRs) have been demonstrated using thickness contrast in In-doped ZnO (IZO) quantum dot (QD) seed layer. The use of IZO QD as a seed layer has enabled the direct growth of ZnO NRs on soft substrates such as polyethylene terephthalate (PET) and polydimethylsiloxane (PDMS). Depending on the annealing temperature, the seed layers show different grain sizes: as the annealing temperature increases, the seed grain size also increases accordingly. Interestingly, the hydrothermal growth of ZnO NRs has been found to depend on the seed grain size: the larger grain seed sample shows earlier start of growth compared to smaller seed grain counterpart. The same growth behavior has been found in the growth of ZnO NRs on seed layers having different thickness, due again to the difference in seed grain size. To advantageously exploit the observed growth behavior, the IZO QDs seed layers have been patterned by soft lithographic technique, which led to the formation of alternating thin/thick region periodically. On this patterned seed surface, the thin regions showed earlier start of NRs growth compared to thick regions, enabling the spatially selective growth of ZnO NRs. When applied for acetone gas sensors, the selectively grown sample showed better performance than the non-selectively grown counterpart. The low resistance in air, due to increased amount of chemisorbed oxygen, has been found to be responsible for the inferior sensor performance with non-selectively grown sample.
机译：在掺in的ZnO（IZO）量子点（QD）种子层中，通过厚度对比，证明了ZnO纳米棒（NR）的选择性生长。使用IZO量子点作为种子层，可以在软衬底上直接生长ZnO NR，如聚对苯二甲酸乙二醇酯（PET）和聚二甲基硅氧烷（PDMS）。根据退火温度的不同，种子层显示出不同的晶粒尺寸：随着退火温度的升高，种子晶粒尺寸也相应增加。有趣的是，已经发现ZnO NRs的水热生长取决于种子粒度：与较小的种子粒度相比，较大的种子样品显示出更早的生长开始。在不同厚度的种子层上生长ZnO NRs时也发现了相同的生长行为，这也是由于种子粒度的不同。为了有利地利用观察到的生长行为，采用软光刻技术对IZO量子点种子层进行图案化，从而周期性地形成薄/厚交替区域。在这种图案化的种子表面上，与厚区域相比，薄区域显示出更早的NRs生长开始，从而实现了ZnO NRs的空间选择性生长。当应用于丙酮气体传感器时，选择性生长的样品比非选择性生长的样品表现出更好的性能。由于化学吸附氧的增加，空气中的低电阻是非选择性生长样品传感器性能较差的原因。

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