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首页> 外文期刊>Nanotechnology >Solution processed nanostructured hybrid materials based on PbS quantum dots and reduced graphene oxide with tunable optoelectronic properties
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Solution processed nanostructured hybrid materials based on PbS quantum dots and reduced graphene oxide with tunable optoelectronic properties

机译：基于PBS量子点的溶液加工纳米结构杂化材料，并具有可调谐光电性能的石墨烯氧化物

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Nanostructured hybrid materials (NHMs) are promising candidates to improve the performance of several materials in different applications. In the case of optoelectronic technologies, the ability to tune the optical absorption of such NHMs is an appealing feature. Along with the capacity to transform the absorbed light into charge carriers (CC), and their consequently efficient transport to the different electrodes. In this regard, NHM based on graphene-like structures and semiconductor QDs are appealing candidates, assuming the NHMs retain the light absorption and CC photogeneration properties of semiconductor QDs, and the excellent CC transport properties displayed by graphene-like materials. In the current work a solution-processed NHM using PbS quantum dots (QDs) and graphene oxide (GO) was fabricated in a layer-by-layer configuration by dip-coating. Afterwards, these NHMs were reduced by thermal or chemical methods. Reduction process had a direct impact on the final optoelectronic properties displayed by the NHMs. All reduced samples displayed a decrement in their resistivity, particularly the sample chemically reduced, displaying a 10(7) fold decrease; mainly attributed to N-doping in the reduced graphene oxide (rGO). The optical absorption coefficients also showed a dependence on the rGO's reduction degree, with reduced samples displaying higher values, and sample thermally reduced at 300 degrees C showing the highest absorption coefficient, due to the combined absorption of unaltered PbS QDs and the appearance of sp(2) regions within rGO. The photogenerated current increased in most reduced samples, displaying the highest photocurrent the sample reduced at 400 degrees C, presenting a 2500-fold increment compared to the NHM before reduction, attributed to an enhanced CC transfer from PbS QDs to rGO, as a consequence of an improved band alignment between them. These results show clear evidence on how the optoelectronic properties of NHMs based on semiconductor nanoparticles and rGO, can be tuned based on their configuration and the reduction process parameters.
机译：纳米结构杂化材料（NHMs）是在不同应用中改善多种材料性能的有希望的候选材料。就光电子技术而言，调整此类NHM的光吸收的能力是一个吸引人的特点。以及将吸收的光转化为电荷载流子（CC）的能力，并因此有效地传输到不同的电极。在这方面，基于类石墨烯结构和半导体量子点的NHM是有吸引力的候选材料，假设NHM保留了半导体量子点的光吸收和CC光生特性，以及类石墨烯材料所显示的优异CC传输特性。在目前的工作中，使用PbS量子点（QDs）和氧化石墨烯（GO）通过浸渍涂层以逐层结构制备溶液处理的NHM。之后，这些NHM通过热或化学方法还原。还原过程对NHMs显示的最终光电性能有直接影响。所有还原样品的电阻率都有所下降，尤其是化学还原的样品，电阻率下降了10（7）倍；主要归因于还原氧化石墨烯（rGO）中的N掺杂。光学吸收系数也显示出对rGO还原度的依赖性，还原后的样品显示出更高的值，而在300℃下热还原的样品显示出最高的吸收系数，这是由于未改变的PbS量子点的综合吸收和rGO内sp（2）区域的出现。在大多数还原样品中，光生电流增加，显示出最高的光电流。样品在400℃时还原，与还原前的NHM相比，呈现出2500倍的增量，这归因于PbS量子点到rGO的CC转移增强，这是它们之间的能带对齐改善的结果。这些结果清楚地表明，基于半导体纳米颗粒和rGO的NHMs的光电特性可以根据其结构和还原工艺参数进行调节。

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