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Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy

机译：氢化物气相外延型富含虹吸纳米棒优化的综合模型

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摘要

Controlled growth of In-rich InGaN nanowires/nanorods (NRs) has long been considered as a very challenging task. Here, we present the first attempt to fabricate InGaN NRs by selective area growth using hydride vapor phase epitaxy. It is shown that InGaN NRs with different indium contents up to 90% can be grown by varying the In/Ga flow ratio. Furthermore, nanowires are observed on the surface of the grown NRs with a density that is proportional to the Ga content. The impact of varying the NH3 partial pressure is investigated to suppress the growth of these nanowires. It is shown that the nanowire density is considerably reduced by increasing the NH3 content in the vapor phase. We attribute the emergence of the nanowires to the final step of growth occurring after stopping the NH3 flow and cooling down the substrate. This is supported by a theoretical model based on the calculation of the supersaturation of the ternary InGaN alloy in interaction with the vapor phase as a function of different parameters assessed at the end of growth. It is shown that the decomposition of the InGaN solid alloy indeed becomes favorable below a critical value of the NH3 partial pressure. The time needed to reach this value increases with increasing the input flow of NH3, and therefore the alloy decomposition leading to the formation of nanowires becomes less effective. These results should be useful for fundamental understanding of the growth of InGaN nanostructures and may help to control their morphology and chemical composition required for device applications.
机译：长期以来，富铟InGaN纳米线/纳米棒（NRs）的控制生长一直被认为是一项非常具有挑战性的任务。在这里，我们首次尝试通过氢化物气相外延选择性区域生长来制备InGaN NRs。结果表明，通过改变In/Ga流量比，可以生长出不同铟含量高达90%的InGaN NRs。此外，在生长的NRs表面观察到纳米线，其密度与Ga含量成正比。研究了改变NH3分压对抑制这些纳米线生长的影响。结果表明，增加气相中的NH3含量可以显著降低纳米线密度。我们将纳米线的出现归因于停止NH3流动并冷却基板后发生的最后一步生长。这得到了一个理论模型的支持，该模型基于三元InGaN合金与气相相互作用的过饱和度的计算，作为生长结束时评估的不同参数的函数。结果表明，在低于NH3分压的临界值时，InGaN固体合金的分解确实变得有利。达到该值所需的时间随着NH3输入流量的增加而增加，因此导致纳米线形成的合金分解效率降低。这些结果有助于从根本上理解InGaN纳米结构的生长，并有助于控制器件应用所需的形貌和化学成分。

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