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首页> 外文期刊>Nanotechnology >Recyclable free-polymer transfer of nano-grain MoS2 film onto arbitrary substrates
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Recyclable free-polymer transfer of nano-grain MoS2 film onto arbitrary substrates

机译：将纳米粒MOS2膜的可回收自由聚合物转移到任意基材上

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摘要

Clean transfer of transition metal dichalcogenides (TMDs) film is highly desirable, as intrinsic properties of TMDs may be degraded in a conventional wet transfer process using a polymer-based resist and toxic chemical solvent. Residues from the resists often remain on the transferred TMDs, thereby causing a significant variation in their electrical and optical characteristics. Therefore, an alternative to the conventional wet transfer method is needed-one in which no residue is left behind. Herein, we report that our molybdenum disulfide (MoS2) films synthesized by plasma-enhanced chemical vapor deposition can be easily transferred onto arbitrary substrates (such as SiO2/Si, polyimide, fluorine-doped tin oxide, and polyethersulfone) by using water alone, i.e. without residues or chemical solvents. The transferred MoS2 film retains its original morphology and physical properties, which are investigated by optical microscopy, atomic force microscopy, Raman, x-ray photoelectron spectroscopy, and surface tension analysis. Furthermore, we demonstrate multiple recycling of the resist-free transfer for the nano-grain MoS2 film. Using the proposed water-assisted and recyclable transfer, MoS2/p-doped Si wafer photodiode was fabricated, and the opto-electric properties of the photodiode were characterized to demonstrate the feasibility of the proposed method.
机译：过渡金属二卤化物（TMD）薄膜的清洁转移是非常理想的，因为TMD的固有特性可能会在使用基于聚合物的抗蚀剂和有毒化学溶剂的传统湿转移过程中退化。电阻的残留物通常留在转移的TMD上，从而导致其电学和光学特性发生显著变化。因此，需要一种替代传统湿转移法的方法，即不留残渣的方法。在此，我们报告，通过等离子体增强化学气相沉积法合成的二硫化钼（MoS2）薄膜可以通过单独使用水（即没有残留物或化学溶剂）轻松转移到任意衬底上（例如SiO2/Si、聚酰亚胺、掺氟氧化锡和聚醚砜）。通过光学显微镜、原子力显微镜、拉曼光谱、x射线光电子能谱和表面张力分析，转移的MoS2薄膜保留了其原始形态和物理性质。此外，我们还证明了纳米颗粒MoS2薄膜无抗蚀剂转移的多重循环。利用所提出的水辅助和可回收转移技术，制备了MoS2/p掺杂硅晶片光电二极管，并对光电二极管的光电特性进行了表征，证明了所提出方法的可行性。

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