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首页> 外文期刊>Nanotechnology >A new approach to achieving strong ferroelectric properties in TiN/Hf0.5Zr0.5O2/TiN devices
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A new approach to achieving strong ferroelectric properties in TiN/Hf0.5Zr0.5O2/TiN devices

机译：一种在锡/ HF0.5ZR0.5O2 / TIN器件中实现强铁电性能的新方法

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摘要

In this paper, we propose a method to improve the performance of TiN/Hf0.5Zr0.5O2 (HZO)/TiN Nano-capacitors used in memory devices. Instead of direct fabrication of the TiN/HZO/TiN device, our method involves an intermediate step in which W metal is used as a capping material to induce a large in-plane tensile strain during rapid thermal annealing, resulting in a total suppression of the monoclinic phase and the appearance of the ferroelectric phase. Consequently, after removing the W capping electrode through an etching process and the post-deposition of a TiN top electrode at room temperature, a high remnant polarization of approximately 40 mu C cm(-2) and a 65% increase of coercive field were obtained. Moreover, the leakage current was reduced by an order of magnitude compared to the normal TiN/HZO/TiN capacitor; this result is attributed to the presence (absence) of the W/HZO (TiN/HZO) top interface during thermal annealing. The formation of a TiOx interfacial layer at elevated temperatures, which pulls oxygen from the HZO layer, resulting in the formation of oxygen vacancies, is the main cause of the high leakage current through the TiN/HZO/TiN stacks. It was confirmed that the re-capped TiN/HZO/TiN capacitor has a comparable endurance to a normal capacitor. Our results offer the re-capping process as a promising approach to fabricating HfO2-based ferroelectric memory devices with various electrode materials.
机译：在本文中，我们提出了一种改善TiN/Hf0性能的方法。5Zr0。存储设备中使用的5O2（HZO）/TiN纳米电容器。我们的方法不是直接制造TiN/HZO/TiN器件，而是采用中间步骤，在快速热退火过程中，使用W金属作为封盖材料来诱导大的面内拉伸应变，从而完全抑制单斜相和铁电相的出现。因此，在通过蚀刻工艺移除W覆盖电极并在室温下后沉积TiN顶电极后，获得了约40μC cm（-2）的高残余极化和65%的矫顽场增加。此外，与普通的TiN/HZO/TiN电容器相比，泄漏电流降低了一个数量级；这一结果归因于热退火期间W/HZO（TiN/HZO）顶部界面的存在（不存在）。在高温下形成TiOx界面层，从HZO层中吸出氧气，从而形成氧空位，这是通过TiN/HZO/TiN叠层的高泄漏电流的主要原因。经证实，重新封端的TiN/HZO/TiN电容器具有与普通电容器相当的耐久性。我们的研究结果为用不同的电极材料制备HfO2基铁电存储器提供了一种很有前景的方法。

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