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Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory

机译：钨掺杂对inzno导电桥接随机存取记忆变异性的影响

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摘要

The characteristics of conductive-bridging random access memory (CBRAM) with amorphous indium-tungsten-zinc-oxide (a-InWZnO) switching layer and copper (Cu) ion-supply layer were prepared by sputtering. It was found that the doping ratio of tungsten has a significant effect on the memory characteristics of the CBRAM, and the doping of tungsten acts as a suppressor of oxygen vacancies in the InWZnO film. The O 1s binding energy associated with the oxygen-deficient regions in the alpha-InWZnO thin film decreases with increasing tungsten doping ratio, which can be demonstrated by x-ray photoelectron spectroscopy. When the tungsten doping ratio is 15%, the a-InWZnO CBRAM can achieve the excellent memory characteristics, such as high switching endurance (up to 9.7 x 10(3) cycling endurance), low operating voltage, and good retention capability. Moreover, the electrical uniformity and switching behavior of InWZnO device are evidently improved as the doping ratio of tungsten in the switching layer increases. These results suggest that CBRAM based on novel material InWZnO have great potential to be used in high-performance memory devices.
机译：采用溅射法制备了具有非晶态铟钨氧化锌（a-InWZnO）开关层和铜（Cu）离子供应层的导电桥接随机存取存储器（CBRAM）。研究发现，钨的掺杂比例对CBRAM的存储特性有显著影响，钨的掺杂对InWZnO薄膜中的氧空位起到了抑制作用。x射线光电子能谱表明，随着钨掺杂率的增加，αInWZnO薄膜中与缺氧区相关的O 1s结合能降低。当钨掺杂率为15%时，a-InWZnO CBRAM可以实现优异的存储特性，例如高开关耐久性（高达9.7x10（3）循环耐久性）、低工作电压和良好的保持能力。此外，随着开关层中钨掺杂比例的增加，InWZnO器件的电均匀性和开关行为得到明显改善。这些结果表明，基于新型材料InWZnO的CBRAM在高性能存储器件中具有巨大的应用潜力。

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