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Quantum simulation investigation of work-function variation in nanowire tunnel FETs

机译：纳米线隧道FET工作功能变化的量子仿真研究

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The variability induced by the work-function variation (WFV) in p-type ultra-scaled nanowire tunnel FET (TFET) has been studied by using the Non-Equilibrium Green's Function module implemented in University of Glasgow quantum transport simulator called NESS. To provide a thorough insight into the influence of WFV, we have simulated 250 atomistically different nanowire TFETs and the obtained results are compared to nanowire MOSFETs first. Our statistical simulations reveal that the threshold voltage (V-th) variations of MOSFETs and TFETs are comparable, whereas the on-current (I-on) and off-current (I-off) variations of TFETs are smaller and higher, respectively in comparison to the MOSFET. Based on the results of the simulations, we have provided a physical insight into the variations of the I-on and I-off currents. Then, we compared the nanowire and Fin TFETs structures with different oxide thickness in terms of the WFV-induced variability. The results show that WFV has a strongest impact on the I-off, and moderate effect on the I-on and V-th in nanowire TFET with smaller oxide thickness. Lastly, it is found that compared with the random discrete dopants, WFV is a relatively weaker variability source in ultra-scaled nanowire TFETs, especially from the point of view of I-on variation.
机译：利用格拉斯哥大学量子传输模拟器中的非平衡格林函数模块，研究了工作函数变化（WFV）在p型超尺度纳米线隧道FET（TFET）中的变化。为了深入了解WFV的影响，我们模拟了250种原子不同的纳米线TFET，并首先将所得结果与纳米线MOSFET进行了比较。我们的统计模拟显示，与MOSFET相比，MOSFET和TFET的阈值电压（V-th）变化具有可比性，而TFET的导通电流（I-on）和关断电流（I-off）变化分别更小和更高。根据模拟结果，我们对I-on和I-off电流的变化进行了物理分析。然后，我们比较了不同氧化层厚度的纳米线和翅片TFETs结构在WFV诱导的可变性方面的差异。结果表明，在氧化层厚度较小的纳米线TFET中，WFV对I-off的影响最大，对I-on和V-th的影响中等。最后，我们发现，与随机离散掺杂剂相比，WFV在超尺度纳米线TFET中是一个相对较弱的变化源，尤其是从I-on变化的角度来看。

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