A high operating voltage micro-supercapacitor based on the interlamellar modulation type Ti(3)C(2)T(x)MXene

Feng Xin; Ning Jing; Xia Maoyang; Guo Haibin; Zhou Yu; Wang Dong; Zhang Jincheng; Hao Yue

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A high operating voltage micro-supercapacitor based on the interlamellar modulation type Ti(3)C(2)T(x)MXene

机译：基于Interlanellar调制类型Ti（3）C（2）T（x）mxene的高工作电压微型超级电容器

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The increasing demand for miniaturized, wearable, and flexible electronics has promoted the development of micro power sources such as microsupercapacitors (MSCs). This work reports a high-performance MSC based on Ti3C2Tx-layer/MnO2-nanorod with an ionic liquid gel electrolyte, achieving a high areal capacitance of 24.7 mF cm(-2)within a wide voltage window of 2.5 V. The specific layer-rod interlaced structure of Ti3C2Tx/MnO(2)is designed to solve the inaccessibility of large-sized ions in ionic liquids into Ti(3)C(2)T(x)layers. As a result, the structure modification provides an enhanced capacitance because the expanded interspace enables a sufficient number of large-sized ions to intercalate/deintercalate. This work provides insightful guidance for the interlaminar modification of Ti(3)C(2)T(x)MXene to accommodate high operating voltage electrolyte with large-sized ions to obtain high-performance MSCs.

机译：对小型化、可穿戴和柔性电子产品的需求日益增长，推动了微超级电容器（MSC）等微电源的发展。本文报道了一种基于Ti3C2Tx层/MnO2纳米棒和离子液体凝胶电解质的高性能MSC，在2.5 V的宽电压窗口内实现了24.7 mF cm（-2）的高面积电容。Ti3C2Tx/MnO（2）的特定层杆交错结构旨在解决离子液体中的大尺寸离子无法进入Ti（3）C（2）T（x）层的问题。因此，结构修饰提供了增强的电容，因为扩展的间隙使足够数量的大尺寸离子能够插层/脱层。这项工作为Ti（3）C（2）T（x）mxen的层间改性提供了深刻的指导，以适应高工作电压电解液和大尺寸离子，从而获得高性能的MSCs。

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来源
《Nanotechnology》 |2021年第3期|共8页
作者
Feng Xin; Ning Jing; Xia Maoyang; Guo Haibin; Zhou Yu; Wang Dong; Zhang Jincheng; Hao Yue;
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作者单位

Xidian Univ State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;

Xidian Univ State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;

Xidian Univ State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;

Xidian Univ State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;

Xidian Univ State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;

Xidian Univ State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;

Xidian Univ State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;

Xidian Univ State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;

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原文格式 PDF
正文语种 eng
中图分类特种结构材料;
关键词
micro-supercapacitor; Ti(3)C(2)T(x)MXene; interlaminar modification; intercalation pseudocapacitance;

机译：微型超级电容器;Ti（3）C（2）T（x）MXene;层间修饰;插层假电容;

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A high operating voltage micro-supercapacitor based on the interlamellar modulation type Ti(3)C(2)T(x)MXene

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