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Magnetotransport in hybrid InSe/monolayer graphene on SiC

机译：SIC上的混合inse / Monolayer Graphene的MagnetOcransport

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摘要

The magnetotransport properties of a hybrid InSe/monolayer graphene in a SiC system are systematically studied. Compared to those of its bare graphene counterpart, in InSe/graphene, we can effectively modify the carrier density, mobility, effective mass, and electron-electron (e-e) interactions enhanced by weak disorder. We show that in bare graphene and hybrid InSe/graphene systems, the logarithmic temperature (lnT) dependence of the Hall slope R-H = delta R-xy/delta B = delta rho(xy)/delta B can be used to probe e-e interaction effects at various temperatures even when the measured resistivity does not show a lnT dependence due to strong electron-phonon scattering. Nevertheless, one needs to be certain that the change of R-H is not caused by an increase of the carrier density by checking the magnetic field position of the longitudinal resistivity minimum at different temperatures. Given the current challenges in gating graphene on SiC with a suitable dielectric layer, our results suggest that capping a van der Waals material on graphene is an effective way to modify the electronic properties of monolayer graphene on SiC.
机译：系统地研究了SiC体系中InSe/单层石墨烯杂化材料的磁输运性质。与裸石墨烯相比，在InSe/石墨烯中，我们可以有效地修饰弱无序增强的载流子密度、迁移率、有效质量和电子-电子（e-e）相互作用。我们表明，在裸石墨烯和InSe/石墨烯混合系统中，霍尔斜率R-H=δR-xy/δB=δrho（xy）/δB的对数温度（lnT）依赖性可以用来探测不同温度下的e-e相互作用效应，即使测量的电阻率由于强电子声子散射而不显示lnT依赖性。然而，通过检查不同温度下纵向电阻率最小值的磁场位置，需要确定R-H的变化不是由载流子密度增加引起的。考虑到目前在用合适的介电层将石墨烯选通到碳化硅上所面临的挑战，我们的结果表明，在石墨烯上覆盖范德华材料是一种有效的方法，可以改变碳化硅上单层石墨烯的电子性质。

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