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Improved responsivity of MgZnO film ultraviolet photodetectors modified with vertical arrays ZnO nanowires by light trapping effect

机译:利用垂直阵列ZnO纳米线改进Mgzno膜紫外光探测器的改善响应性通过光捕获效果改进

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摘要

The light trapping effect of ZnO nanowires (NWs) is attracting increasing attention as it effectively enhances the photoelectric effect. In this paper, high-density ZnO NWs are grown on a metal-semiconductor-metal structure MgZnO film UV photodetector (PD) as a light trapping unit. The photogenerated carriers diffuse along the longitudinal axis of the ZnO NWs, then diffuse onto the thin film and are collected by an applied bias electrode. When the device is connected to the NWs, the responsivity is about 12 times higher than that of the pure MgZnO film UV PD with a large light-dark current ratio (4.93 x 10(4)). The array structure of the ZnO NWs enhances the number of photogenerated carriers at the top interface and provides a longer optical path length and a larger surface area. The resulting light trapping effect endows the device with excellent photoelectric properties. In this work, the introduction of NWs not only fundamentally improves the performance of the MgZnO thin film UV PD, but the resulting photodetector also demonstrates a sharp contrast between light trapping UV PD and the MgZnO thin film UV PD.
机译:ZnO纳米线(NWs)的光捕获效应因其有效增强光电效应而受到越来越多的关注。本文在金属-半导体-金属结构MgZnO薄膜紫外光探测器(PD)上生长高密度ZnO纳米线作为光捕获单元。光生载流子沿ZnO纳米线的纵轴扩散,然后扩散到薄膜上,并通过外加偏置电极收集。当该器件连接到纳米线时,其响应度大约是纯MgZnO薄膜UV-PD的12倍,且具有较大的明暗电流比(4.93 x 10(4))。ZnO纳米线的阵列结构增强了顶部界面上光生载流子的数量,并提供了更长的光程长度和更大的表面积。由此产生的光捕获效应赋予该器件优异的光电性能。在这项工作中,NWs的引入不仅从根本上改善了MgZnO薄膜UV-PD的性能,而且由此产生的光电探测器还显示出光捕获UV-PD和MgZnO薄膜UV-PD之间的鲜明对比。

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