High-speed and high-responsivity p-i-n waveguide photodetector at a 2 mu m wavelength with a Ge0.92Sn0.08/Ge multiple-quantum-well active layer

Wang Haibo; Zhang Jishen; Zhang Gong; Chen Yue; Huang Yi-Chiau; Gong Xiao

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High-speed and high-responsivity p-i-n waveguide photodetector at a 2 mu m wavelength with a Ge0.92Sn0.08/Ge multiple-quantum-well active layer

机译：高速和高响应性P-I-N波导光电探测器，具有GE0.92SN0.08 / GE多量子阱有源层的2μm波长

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We report on p-i-n waveguide photodetectors with a Ge0.92Sn0.08/Ge multiple-quantum-well (MQW) active layer on a strain-relaxed Ge-buffered silicon substrate. The waveguide-photodetector structure is used to elongate the photo-absorption path and keeps a short photo-generated carrier transmission path. In addition, the double-mesa structure with a low substrate doping concentration is implemented, which minimizes the parasitic capacitance. As a result, a high responsivity of 119 mA/W at -1 V and a high bandwidth of more than 10 GHz at 7 V were achieved at a 2 mu m wavelength. Compared with the surface-illuminated photodetector, the responsivity was improved by similar to 8 times at a 2 mu m wavelength, while keeping the comparable bandwidth. (C) 2021 Optical Society of America

机译：我们报道了具有Ge0的p-i-n波导光电探测器。92Sn0。08/Ge多量子阱（MQW）活性层，位于应变松弛的Ge缓冲硅衬底上。波导光电探测器结构用于拉长光吸收路径，并保持较短的光生载流子传输路径。此外，实现了具有低衬底掺杂浓度的双台面结构，从而使寄生电容最小化。结果，在2μm波长下，在-1v下获得了119ma/W的高响应度，在7v下获得了10ghz以上的高带宽。与表面照明光电探测器相比，在2μm波长下，响应度提高了约8倍，同时保持了可比带宽。（2021）美国光学学会

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来源
《Optics Letters》 |2021年第9期|共4页
作者
Wang Haibo; Zhang Jishen; Zhang Gong; Chen Yue; Huang Yi-Chiau; Gong Xiao;
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作者单位

Natl Univ Singapore Dept Elect &

Comp Engn Singapore 117576 Singapore;

Natl Univ Singapore Dept Elect &

Comp Engn Singapore 117576 Singapore;

Natl Univ Singapore Dept Elect &

Comp Engn Singapore 117576 Singapore;

Natl Univ Singapore Dept Elect &

Comp Engn Singapore 117576 Singapore;

Appl Mat Inc Sunnyvale CA 95054 USA;

Natl Univ Singapore Dept Elect &

Comp Engn Singapore 117576 Singapore;

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正文语种 eng
中图分类计量学;光学;
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1. High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers [J] . Xiao-Qian Du, Bu-Wen Cheng, Chun-Lai Xue, 中国物理：英文版 . 2019,第006期
2. High-speed waveguide-integrated Ge/Si avalanche photodetector [J] . Hui Cong, Chunlai Xue, Zhi Liu, 中国物理：英文版 . 2016,第005期
3. Zero-bias high-responsivity high-bandwidth top-illuminated germanium p-i-n photodetectors [J] . Li Chong, Xue Chun-Lai, Liu Zhi, 中国物理：英文版 . 2014,第003期
4. Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs [J] . 朱彬, 韩勤, 杨晓红, 中国物理快报：英文版 . 2010,第003期
5. Calculation of Ge0.5Si0.5-Si Superlattice Photodetectors on Ge0.05Si0.95 Waveguides:The Optimum Parameters① [J] . 无半导体光子学与技术：英文版 . 1997,第001期
6. Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer [J] . Huang Yu-Hui, Chang Guo-En, Li Hui, Optics Letters . 2017,第9期

机译：基于SN的波导P-I-N光电探测器，具有应变GESN / GE多量子阱有源层
7. Passivation of multiple-quantum-well Ge_(0.97)Sn_(0.03)/Ge p-i-n photodetectors [J] . Matthew Morea, Corinna E. Brendel, Kai Zang, Applied Physics Letters . 2017,第9期

机译：多量子阱Ge_（0.97）Sn_（0.03）/ Ge p-i-n光电探测器的钝化
8. Evanescent-Coupled Ge p-i-n Photodetectors on Si-Waveguide With SEG-Ge and Comparative Study of Lateral and Vertical p-i-n Configurations [J] . Wang J., Loh W. Y., Chua K. T., IEEE Electron Device Letters . 2008,第5期

机译：具有SEG-Ge的Si-波导上逝耦合的Ge p-i-n光电探测器以及横向和垂直p-i-n构型的比较研究
9. First Demonstration of Waveguide-Coupled Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on the SOI Platform for 2-μm Wavelength Optoelectronic Integrated Circuit [C] . Haibo Wang, Yue Chen, Jishen Zhang, IEEE Symposium on VLSI Technology . 2021

机译：SOI平台上的波导耦合GE0.92SN0.08 / GE多量子孔光电探测器的首先说明2μm波长光电集成电路
10. Multiple-quantum-well waveguide modulators at 1.3-micrometer wavelength for analog fiber-optic links [D] . Loi, Kwok-Kwong. 1998

机译：1.3微米波长的多量子阱波导调制器，用于模拟光纤链路
11. High Performance p-i-n Photodetectors on Ge-on-Insulator Platform [O] . Xuewei Zhao, Guilei Wang, Hongxiao Lin, 2021

机译：高性能P-I-N光电探测器在GE-Ins-Insulator平台上
12. High-responsivity low-voltage 28-Gb/s Ge p-i-n photodetector with silicon contacts [O] . Chen, HT, Verheyen, P, De Heyn, P, 2015

机译：具有硅触点的高响应度低压28-Gb / s Ge p-i-n光电探测器
13. High-speed >90% Quantum-Efficiency p-i-n Photodiodes with a Resonance Wavelength Adjustable in the 795-835 nm Range. [R] . E. Ozbay I. Kimukin M. Gokkavas N. Biyikli O. Aytur 1999

机译：高速> 90％量子效率p-i-n光电二极管，谐振波长可在795-835 nm范围内调节。

High-speed and high-responsivity p-i-n waveguide photodetector at a 2 mu m wavelength with a Ge0.92Sn0.08/Ge multiple-quantum-well active layer

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