Nanostructure enabled lower on-state resistance and longer lock-on time GaAs photoconductive semiconductor switches

Liu Ruijia; Shang Annan; Chen Chang-Jiang; Lee Yun Goo; Yin Shizhuo

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Nanostructure enabled lower on-state resistance and longer lock-on time GaAs photoconductive semiconductor switches

机译：纳米结构使能较低的导通电阻和更长的锁定时间GaAs光电导半导体开关

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We report a new, to the best of our knowledge, type of SI-GaAs photoconductive semiconductor switch (PCSS) with nanostructures. Since light can enter from both the top and. side surfaces of nanostructures, the effective penetration depth is significantly increased. Lower on-state resistance and a longer lock-on time have been achieved in the non-linear mode with this design, as well as a lower triggering fluence in the linear mode. This could be highly useful for a variety of applications that require lower on-state resistance and/or longer lock-on time such as pulsed power systems and firing set switches. (C) 2021 Optical Society of America

机译：据我们所知，我们报道了一种新型的纳米结构SI-GaAs光电导半导体开关（PCSS）。因为光可以从顶部和顶部进入。在纳米结构的侧面，有效穿透深度显著增加。这种设计在非线性模式下实现了更低的导通电阻和更长的锁定时间，并且在线性模式下实现了更低的触发通量。这对于需要较低导通电阻和/或较长锁定时间的各种应用非常有用，例如脉冲功率系统和点火开关。（2021）美国光学学会

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来源
《Optics Letters》 |2021年第4期|共4页
作者
Liu Ruijia; Shang Annan; Chen Chang-Jiang; Lee Yun Goo; Yin Shizhuo;
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Penn State Univ Dept Elect Engn University Pk PA 16802 USA;

Penn State Univ Dept Elect Engn University Pk PA 16802 USA;

Penn State Univ Dept Elect Engn University Pk PA 16802 USA;

Penn State Univ Dept Elect Engn University Pk PA 16802 USA;

Penn State Univ Dept Elect Engn University Pk PA 16802 USA;

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正文语种 eng
中图分类计量学;光学;
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1. Influence of Hot-Carriers on the On-State Resistance in Si and GaAs Photoconductive Semiconductor Switches Working at Long Pulse Width [J] . Chong-Biao Luan, Hong-Tao Li 中国物理快报：英文版 . 2020,第004期
2. Fiber-Optically Triggered Four Parallel GaAs Photoconductive Semiconductor Switches [J] . 施卫, 薛红, 李宁, 等离子体科学和技术（英文版） . 2011,第006期
3. Time-Dependent Analysis of High-Gain Triggering in Semi-insulating GaAs Photoconductive Switches [J] . 施卫, 赵卫, 梁振宪, 中国物理快报：英文版 . 2001,第011期
4. High power, longevity gallium arsenide photoconductive semiconductor switches [J] . YANG HongChun, CUI HaiJuan, SUN YunQing, 中国科学通报：英文版 . 2010,第013期
5. Mechanism of Current Oscillations in Gallium Arsenide Photoconductive Semiconductor Switches [J] . TIAN Li-Qiang, SHI Wei 中国物理快报：英文版 . 2008,第007期
6. Effect of Surface Morphology on the On-state Resistance of SiC Photoconductive Semiconductor Switches [J] . Xue-Chao Liu, Wei-Huang, Shao-Hui Chang, Materials science forum . 2012,第PTa2期

机译：表面形态对SiC光电导开关的导通电阻的影响
7. Ruby fluorescence-enabled ultralong lock-on time high-gain gallium arsenic photoconductive semiconductor switch [J] . Chao Ju-Hung, Zhu Wenbin, Chen Chang-Jiang, Optics Letters . 2018,第16期

机译：使Ruby荧光启用的超级锁定时间高增益镓砷感光半导体开关
8. Effect of periodic array on the on-state resistances of GaAs photoconductive semiconductor switch based on total reflection theory [J] . Longfei Xiao, Xiaobo Hu, Xiufang Chen, AIP Advances . 2017,第6期

机译：基于全反射理论的周期阵列对GaAs光电导开关的导通电阻的影响
9. Nanostructure enabled longer lock-on time GaAs photoconductive semiconductor switches [C] . Ruijia Liu, Chang-Jiang Chen, Annan Shang, Conference on Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications . 2020

机译：纳米结构使能更长的锁定时间GaAs光电导半导体开关
10. Simulation of high-field transport in photoconductive semiconductor switches. [D] . Kang, Samsoo. 1998

机译：光导半导体开关中高场传输的仿真。
11. Effect of periodic array on the on-state resistances of GaAs photoconductive semiconductor switch based on total reflection theory [O] . Longfei Xiao, Xiaobo Hu, Xiufang Chen, 2017

机译：基于全反射理论的周期阵列对Gaas光电导半导体开关导通电阻的影响
12. Ground penetrating radar enabled by high gain GaAs photoconductive semiconductor switches [R] . Loubriel, G. M. , Buttram, M. T. , Aurand, J. F. , 1996

机译：通过高增益Gaas光电导半导体开关实现的探地雷达

Nanostructure enabled lower on-state resistance and longer lock-on time GaAs photoconductive semiconductor switches

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