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Ultra-thin Si-padded Si3N4 waveguides for low-loss photonics

机译:用于低损耗光子的超薄SI填充Si3N4波导

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We proposed an ultra-thin Si-padded Si3N4 waveguide consisting of a very thin Si slab underneath a Si3N4 strip separated by a SiO2 layer. The Si slab and the Si3N4 strip forma hybrid waveguide mode, where the mode field is confined in these two structures. The measured waveguide propagation loss is 0.055 dB/cm, and the bending loss is 0.09 dB per 90 degrees bend, depending on the bending radius. Because part of the waveguide mode is distributed in the Si slab, this waveguide structure has potential for implementing low-loss and highspeed photonic integrated circuits. (C) 2021 Optical Society of America.
机译:我们提出了一种超薄的Si填充Si3N4波导,它由一个非常薄的Si板构成,在Si3N4条下面由SiO2层隔开。Si平板和Si3N4条带形成混合波导模式,模式场被限制在这两种结构中。测量的波导传播损耗为0.055 dB/cm,弯曲损耗为每90度弯曲0.09 dB,具体取决于弯曲半径。由于部分波导模式分布在硅板中,这种波导结构具有实现低损耗高速光子集成电路的潜力。(2021)美国光学学会。

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