High-performance all-silicon polarizer with 415 nm bandwidth

Liu Weixi; Dai Daoxin; Shi Yaocheng

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High-performance all-silicon polarizer with 415 nm bandwidth

机译：具有415 nm带宽的高性能全硅偏振器

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On-chip silicon polarizers have been widely used in polarization controllers. However, there is limited research on all-silicon polarizer covering the whole optical communication band due to the strong waveguide dispersion for silicon waveguides. In this Letter, we demonstrated an all-silicon TE polarizer with high polarization extinction ratio and low insertion loss, working for the whole optical communication band. The device is based on a shallow-etched waveguide realized on a silicon-on-insulator (SOI) platform. The optical field of TE polarization is designed to be tightly confined in the shallow-etched silicon waveguide, while that ofTMpolarization isweakly confined. As a result, TE polarization propagates through the waveguide with low loss, while TM polarization leaks into the substrate and decays finally. The measurements show that a maximum insertion loss <0.25 dB and polarization extinction ratio.PER/> 20 dB over an ultrabroad operation band from 1260-1675 nm have been achieved for the proposed polarizer. (C) 2021 Optical Society of America

机译：片上硅偏振器已广泛应用于偏振控制器中。然而，由于硅波导具有很强的波导色散特性，目前对覆盖整个光通信波段的全硅偏振器的研究还很有限。在这封信中，我们展示了一种高偏振消光比和低插入损耗的全硅TE偏振器，适用于整个光通信波段。该器件基于在绝缘体上硅（SOI）平台上实现的浅刻蚀波导。TE偏振的光场被设计成严格限制在浅刻蚀硅波导中，而三偏振的光场被设计成弱限制。因此，TE极化以低损耗通过波导传播，而TM极化则泄漏到衬底中并最终衰减。测量结果表明，最大插入损耗<0.25db，偏振消光比小于0.25db。该偏振器在1260-1675nm的超宽工作波段上的PER/>20dB已经实现。（2021）美国光学学会

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《Optics Letters》 |2021年第6期|共4页
作者
Liu Weixi; Dai Daoxin; Shi Yaocheng;
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作者单位

Zhejiang Univ Coll Opt Sci &

Engn Ctr Opt &

Electromagnet Res State Key Lab Modern Opt Instrumentat Hangzhou 310027 Zhejiang Peoples R China;

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正文语种 eng
中图分类计量学;光学;
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High-performance all-silicon polarizer with 415 nm bandwidth

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