Full wafer scale electroluminescence properties of AlGaN-based deep ultraviolet LEDs with different well widths

Zhang Yi; Zhang Shuang; Xu Linlin; Zhang Huixue; Wang Ange; Shan Maocheng; Zheng Zhihua; Wang Hao; Wu Feng; Dai Jiangnan; Chen Changqing

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Full wafer scale electroluminescence properties of AlGaN-based deep ultraviolet LEDs with different well widths

机译：具有不同孔宽度的基于AlGaN的深紫外LED的全晶圆尺度电致发光性能

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Deep ultraviolet (DUV) LEDs have great potential in sterilization, water, air purification, and other fields. In this work, DUV LED wafers with different quantum well (QW) widths were grown by metal-organic chemical vapor deposition. It is found that the light output power (LOP) and peak wavelength of all chips are not only related to the QW thickness but also affected by warpage. For the first time, to the best of our knowledge, a positive correlation between the LOP and peak wavelength of DUV LED chips on the same wafer was observed, which is very important for improving the yield of DUV LEDs and reducing costs. Furthermore, the influence of QW thickness on the external quantum efficiency (EQE) of DUVLED has also been investigated. As the thickness of the QW increases, the exciton localization effect decreases and the quantum confinement Stark effect increases. Consequently, DUVLED wafers with a QW thickness of 2 nm have the highest EQE and yield. These findings not only help to improve the efficiency of DUV LEDs but also provide new insights for evaluating the performance of DUVLED wafers. (C) 2021 Optical Society of America

机译：深紫外（DUV）发光二极管在杀菌、水、空气净化等领域有着巨大的潜力。在这项工作中，采用金属有机化学气相沉积法生长了具有不同量子阱宽度的DUV LED晶片。研究发现，所有芯片的光输出功率（LOP）和峰值波长不仅与量子阱厚度有关，还受翘曲变形的影响。据我们所知，首次在同一晶圆上观察到DUV LED芯片的LOP和峰值波长之间存在正相关，这对于提高DUV LED的产量和降低成本非常重要。此外，还研究了量子阱厚度对DUVLED外量子效率（EQE）的影响。随着量子阱厚度的增加，激子局域化效应减小，量子限制斯塔克效应增大。因此，QW厚度为2nm的DUVLED晶片具有最高的EQE和成品率。这些发现不仅有助于提高DUV LED的效率，而且为评估DUVLED晶圆的性能提供了新的见解。（2021）美国光学学会

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来源
《Optics Letters》 |2021年第9期|共4页
作者
Zhang Yi; Zhang Shuang; Xu Linlin; Zhang Huixue; Wang Ange; Shan Maocheng; Zheng Zhihua; Wang Hao; Wu Feng; Dai Jiangnan; Chen Changqing;
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Huazhong Univ Sci &

Technol Wuhan Natl Lab Optoelect Wuhan 430074 Peoples R China;

Huazhong Univ Sci &

Technol Wuhan Natl Lab Optoelect Wuhan 430074 Peoples R China;

Huazhong Univ Sci &

Technol Wuhan Natl Lab Optoelect Wuhan 430074 Peoples R China;

Huazhong Univ Sci &

Technol Wuhan Natl Lab Optoelect Wuhan 430074 Peoples R China;

Huazhong Univ Sci &

Technol Wuhan Natl Lab Optoelect Wuhan 430074 Peoples R China;

Huazhong Univ Sci &

Technol Wuhan Natl Lab Optoelect Wuhan 430074 Peoples R China;

Huazhong Univ Sci &

Technol Wuhan Natl Lab Optoelect Wuhan 430074 Peoples R China;

Huazhong Univ Sci &

Technol Wuhan Natl Lab Optoelect Wuhan 430074 Peoples R China;

Huazhong Univ Sci &

Technol Wuhan Natl Lab Optoelect Wuhan 430074 Peoples R China;

Huazhong Univ Sci &

Technol Wuhan Natl Lab Optoelect Wuhan 430074 Peoples R China;

Huazhong Univ Sci &

Technol Wuhan Natl Lab Optoelect Wuhan 430074 Peoples R China;

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正文语种 eng
中图分类计量学;光学;
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2. Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers [J] . Cheng Zhang, Hui-Qing Sun, Xu-Na Li, 中国物理：英文版 . 2016,第002期
3. AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template [J] . 桑立雯, 秦志新, 方浩, 中国物理快报：英文版 . 2009,第011期
4. AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template [J] . SANG Li-Wen, QIN Zhi-Xin, FANG Hao, 中国物理快报：英文版 . 2009,第011期
5. Photoluminescence and electroluminescence properties of ZnO films on p-type silicon wafers [J] . 王菲菲, 曹立, 刘瑞斌, 中国物理：英文版 . 2007,第006期
6. Temperature-dependent electroluminescence study on 265-nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates [J] . Ryota Ishii, Akira Yoshikawa, Kazuhiro Nagase, AIP Advances . 2020,第12期

机译：在ALN基材上生长的265纳米alga alg紫外线发光二极管的温度依赖性电致发光研究
7. Improved Reliability of AlGaN-Based Deep Ultraviolet LED With Modified Reflective N-Type Electrode [J] . Zhang Huixue, Zhang Wei, Zhang Shuang, IEEE Electron Device Letters . 2021,第7期

机译：改进基于AlGaN的深紫外LED的可靠性，具有改进的反射N型电极
8. AlGaN-based deep ultraviolet micro-LED emitting at 275 nm [J] . Yu Huabin, Memon Muhammad Hunain, Wang Danhao, Optics Letters . 2021,第13期

机译：基于Algan的深紫外线微LED发射在275nm处
9. Development of AlGaN-based deep-ultraviolet (DUV) LEDs focusing on the fluorine resin encapsulation and the prospect of the practical applications [C] . Akira Hirano, Yosuke Nagasawa, Masamichi Ippommatsu, Conference on UV and higher energy photonics: from materials to applications . 2016

机译：基于氟树脂封装的AlGaN基深紫外（DUV）LED的开发及其实际应用前景
10. Temperature Dependence of Electroluminescence and Current-Voltage Characteristics of Arrays of Deep Ultraviolet AlGaN Micropixel LED [D] . Patel, Dhruvinkumar Prakashchandra. 2021

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11. Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures [O] . Shuxin Tan, Jicai Zhang, Takashi Egawa, 2018

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12. Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure [O] . Huabin Yu, Qian Chen, Zhongjie Ren, 2019

机译：增强基于Algan的深紫外LED的性能，具有渐变量子阱结构
13. Remotely Triggered Solar Blind Signaling Using Deep Ultraviolet (UV) LEDs. [R] . Talley, S. V. 2011

机译：使用深紫外（UV）LED远程触发太阳能盲信号。

Full wafer scale electroluminescence properties of AlGaN-based deep ultraviolet LEDs with different well widths

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