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首页> 外文期刊>Physica, B. Condensed Matter >Structural, morphological, optical and electrical properties of the Ti doped-ZnO (TZO) thin film prepared by RF sputter technique
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Structural, morphological, optical and electrical properties of the Ti doped-ZnO (TZO) thin film prepared by RF sputter technique

机译：RF溅射技术制备的Ti掺杂ZnO（TZO）薄膜的结构，形态学，光学和电性能

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摘要

In this study, the structural, morphological, optical, as well as electrical properties of the titanium doped (wt 5%) ZnO (TZO) thin film grown with the RF sputtering system was examined. TZO thin films were deposited on both corning glass (CG) and n-type Si substrates. It was determined that the TZO thin film deposited on CG has crystallinity, good surface homogeneity, low surface roughness as well as suitable band gap value from X-Ray diffraction (XRD), atomic force microscopy (AFM) as well as UV-Vis analysis. In addition, TZO thin film deposited on the n-Si substrate was used to determine the electrical properties. The current-voltage (I-V) measurements of the Au/TZO/n-Si structure was done at 80 K and 300 K. Capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements of the Au/TZO/n-Si structure was examined for 0.3, 0.5 and 1 MHz.
机译：在本研究中，研究了射频溅射系统生长的掺钛（wt 5%）ZnO（TZO）薄膜的结构、形貌、光学和电学性质。在康宁玻璃（CG）和n型硅衬底上沉积了TZO薄膜。通过X射线衍射（XRD）、原子力显微镜（AFM）和紫外-可见光谱（UV-Vis）分析确定，沉积在CG上的TZO薄膜结晶度好、表面均匀性好、表面粗糙度低，并且具有合适的带隙值。此外，在n-Si衬底上沉积TZO薄膜用于测定电学性质。Au/TZO/n-Si结构的电流-电压（I-V）测量是在80 K和300 K下进行的。Au/TZO/n-Si结构的电容电压（C-V）和电导电压（G/omega-V）测量是在0.3、0.5和1 MHz下进行的。

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