Highly-Doped, Highly-Strained Germanium and Schottky Electroluminescent Diodes

M. El Kurdi; M. Prost; A. Ghrib

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Highly-Doped, Highly-Strained Germanium and Schottky Electroluminescent Diodes

机译：Highly-Doped, Highly-Strained锗和肖特基电致发光二极管

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We demonstrate that room temperature electroluminescence can be obtained from n-doped germanium layers by using a Schottky contact. The electrical and optical properties of the Schottky device are improved by inserting a thin Al2O3 interfacial barrier. We also show that high active doping of Ge grown on Si can be obtained by molecular beam epitaxy by using a co-doping method with Sb and P. We finally discuss the transfer of tensile strain on microdisk resonators using silicon nitride stressor layers.

机译：我们表明,室温致发光可以从n型锗层通过使用一个肖特基接触。肖特基的电子和光学性质设备改进通过插入细氧化铝界面障碍。通用电气的活跃掺杂生长在Si可以获得分子束外延提出使用方法与某人和p .我们最后讨论转让microdisk拉伸应变使用氮化硅谐振器压力源层。

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来源
《ECS transactions》 |2014年第6期|359-364|共6页
作者
M. El Kurdi; M. Prost; A. Ghrib;
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作者单位

Institut d'Electronique Fondamentale, CNRS-Universite Paris Sud, F-91405 Orsay, France;

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原文格式 PDF
正文语种英语
中图分类 Online;
关键词
Optical properties; Schottky; Room temperatureantimonyEnvironmental TemperatureElectricityTensile strainMolecular beam epitaxyelectroluminescent diode;

机译：光学特性;肖特基的房间temperatureantimonyEnvironmentalTemperatureElectricityTensile strainMolecular梁epitaxyelectroluminescent二极管;

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Highly-Doped, Highly-Strained Germanium and Schottky Electroluminescent Diodes

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