Cross-linked bond accelerated interfacial charge transfer in monolayer zinc indium sulfide (ZnIn2S4)/reduced graphene oxide (RGO) heterostructure for photocatalytic hydrogen production with mechanistic insight

Du Chun; Yan Bo; Lin ZhaoyongYang Guowei

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Cross-linked bond accelerated interfacial charge transfer in monolayer zinc indium sulfide (ZnIn2S4)/reduced graphene oxide (RGO) heterostructure for photocatalytic hydrogen production with mechanistic insight

机译：交联键加速界面电荷在单层锌硫化铟的转移(ZnIn2S4) /降低石墨烯氧化物(RGO)异质结光催化氢生产机械的见解

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Due to the shorter carrier transport distance and effective photo-induced charge separation, two-dimensional (2D) heterostructures have been extensively utilized for improving the photocatalytic performance. However, the role of the cross-linked bonds in the RGO-based heterojunction has rarely been focused on. In this study, the 2D/2D heterostructure of monolayer ZnIn2S4 with d(10) electron configuration and graphene oxide has been synthesized. Benefiting from the existence of the cross-linked C-S bonds in the heterostructure, the interfacial carrier transfer could be accelerated in the monolayer ZnIn2S4/RGO heterostructure for effectively inhibiting the recombination of the photo-excited electron and hole. Under visible light irradiation, the ZnIn2S4/RGO heterostructure exhibited a photocatalytic performance superior to that of the ZnIn2S4 and ZnIn2S4/RGO mixture, which is up to 5064 mu mol g(-1) h(-1). In addition, the mechanism involving the migration pathway of the interfacial electron through the cross-linked bonds was observed through the detection of the generated O-2(-) radicals by a BMPO spin-trapping electron spin resonance technique. This work shows that the fabricated heterostructure can effectively prolong the carrier lifetime to enhance the photocatalytic efficiency through dual purpose of suppressing the recombination especially the role of the cross-linked bond, and provides an insight into the photocatalysis mechanism with evidence through experiment.

机译：由于航空运输距离和短有效photo-induced电荷分离,二维(2 d)异质结构广泛用于改善光催化性能。RGO-based交联键异质结很少被关注。这项研究中,2 d / 2 d的异质结构单层ZnIn2S4与d(10)电子配置和氧化石墨烯合成。在异质结构,交联c债券界面载波传输加速的单层ZnIn2S4 / RGO为有效抑制异质结构photo-excited电子的重组洞。ZnIn2S4 / RGO异质结构表现出一个光催化性能优于ZnIn2S4和ZnIn2S4 / RGO混合物,这是5064亩摩尔g (1) h(1)。机制涉及的移民途径界面电子通过交联债券的检测生成0 2(-)自由基由BMPO spin-trapping电子自旋共振技术。表明,异质结构可以制作的有效地延长承运人一生提高光催化效率抑制复合的双重目的特别是交联键的作用,光催化作用提供了一个深入的了解机制,通过实验证据。

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来源
《Catalysis science & technology》 |2019年第15期|4066-4076|共11页
作者
Du Chun; Yan Bo; Lin ZhaoyongYang Guowei;
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作者单位

Sun Yat Sen Univ, Nanotechnol Res Ctr, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

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正文语种英语
中图分类汉语教学;
关键词
hydrogen production; charge transfer; Monolayerselectron spin resonanceCross-linkedcarrier transferInsightBondcarrier lifetime;

机译：氢生产;电荷转移;Monolayerselectron旋转resonanceCross-linkedcarriertransferInsightBondcarrier一生;

Cross-linked bond accelerated interfacial charge transfer in monolayer zinc indium sulfide (ZnIn2S4)/reduced graphene oxide (RGO) heterostructure for photocatalytic hydrogen production with mechanistic insight

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