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首页> 外文期刊>Applied Spectroscopy: Society for Applied Spectroscopy >Applications of Microstructured Silicon Wafers as Internal Reflection Elements in Attenuated Total Reflection Fourier Transform Infrared Spectroscopy
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Applications of Microstructured Silicon Wafers as Internal Reflection Elements in Attenuated Total Reflection Fourier Transform Infrared Spectroscopy

机译：微结构硅晶片作为内部反射元件在衰减全反射傅里叶变换红外光谱中的应用

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摘要

A novel internal reflection element (IRE) for attenuated total reflection Fourier transform infrared (ATR-FT-IR) spectral acquisition is introduced and applied for several surface-sensitive measurements. It is based on microstructured double-side-polished (100) silicon wafers with v-shaped grooves of {111} facets on their backside. These facets of the so-called "microstructured single-reflection elements" (mSRE) are formed by a crystal-oriented anisotropic wet etching process within a conventional wafer structuring process. They are used to couple infrared radiation into and out of the IRE. In contrast to the application of the commonly used silicon multiple-reflection elements (MRE), the new elements provide single-reflection ATR measurements at the opposite wafer side by using simple reflection accessories without any special collimation. Due to the short light path, the spectral range covers the entire mid-infrared region with a high optical throughput, including the range of silicon lattice vibrations from 300 to 1500 cm~(-1). In addition to typical ATR applications, i.e., the measurement of bulk liquids and soft materials, the new reflection elements can be effectively used and customer-specifically designed for in situ and ex situ investigations of aqueous solutions, thin films, and monolayers on Si. Examples presented in this article are in situ etching of native as well as thermal SiO_(2) and characterization of polydimethylsiloxane (PDMS) films on Si under various measuring conditions.
机译：介绍了一种用于衰减全反射傅立叶变换红外（ATR-FT-IR）光谱采集的新型内部反射元件（IRE），并将其应用于多种表面敏感测量。它基于微结构化的双面抛光（100）硅晶片，背面具有{111}面的V形凹槽。所谓的“微结构化单反射元件”（mSRE）的这些方面是在常规晶片构造工艺中通过晶体取向的各向异性湿蚀刻工艺形成的。它们用于将红外辐射与IRE耦合。与通常使用的硅多反射元件（MRE）相比，这些新元件通过使用简单的反射附件在没有特殊准直的情况下在相对的晶片侧提供了单反射ATR测量。由于光路短，光谱范围覆盖了整个中红外区域，具有很高的光通量，包括硅晶格振动的范围从300到1500 cm〜（-1）。除了典型的ATR应用（即散装液体和软质材料的测量）外，新型反射元件还可以有效地使用，并且可以根据客户要求专门设计用于硅上的水溶液，薄膜和单层的原位和异位研究。本文介绍的示例是在各种测量条件下对SiO2和热SiO_（2）进行原位蚀刻以及在Si上表征聚二甲基硅氧烷（PDMS）膜。

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