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Substrate modified thermal stability of mono- and few-layer MoS2

机译：底物热稳定性的mono和修改few-layer二硫化钼

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Two-dimensional semiconducting transition metal dichalcogenides have been employed as key components in various electronic devices. The thermal stability of these ultrathin materials must be carefully considered in device applications because the heating caused by current flow, light absorption, or other harsh environmental conditions is usually unavoidable. In this work, we found that the substrate plays a role in modifying the thermal stability of mono-and few-layer MoS2. Triangular etching holes, which are considered to initiate from defect sites, form on MoS2 when the temperature exceeds a threshold. On Al2O3 and SiO2, monolayer MoS2 is found to be more stable in thermal annealing than few-layer MoS2 either in atmospheric-pressure air or under vacuum; while on mica, the absolute opposite behavior exists. However, this difference due to substrates appears to vanish when using defective, chemical-vapor-deposited MoS2 samples. The substrate modification of the thermal stability of MoS2 with various thicknesses is attributed to the competition between MoS2-substrate interface interaction and MoS2-MoS2 interlayer interaction. Our findings provide important design rules for MoS2-based devices, and also potentially point to a route of controlled patterning of MoS2 with substrate engineering.
机译：二维半导体过渡金属dichalcogenides曾是关键组件在各种电子设备。这些超薄材料的热稳定性必须仔细考虑设备应用程序,因为加热引起的电流、光吸收、或其他恶劣环境条件通常是不可避免的。在这项工作中,我们发现衬底中在修改的热稳定性中的作用mono和few-layer二硫化钼。孔,这被认为是启动缺陷的网站,形成在二硫化钼温度超过一个阈值。二硫化钼是热的发现更稳定比few-layer二硫化钼在退火大气压下的空气或真空;云母,绝对相反的行为存在。然而,这种差异由于基质似乎消失在使用有缺陷时,chemical-vapor-deposited二硫化钼样本。底物热稳定性的修改与各种厚度的二硫化钼是归因于之间的竞争MoS2-substrate接口交互和MoS2-MoS2层间的相互作用。我们的研究结果提供了重要的设计规则MoS2-based设备,也可能指向控制模式的二硫化钼的路线衬底工程。

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