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Phase engineering of seamless heterophase homojunctions with co-existing 3R and 2H phases in WS2 monolayers

机译：阶段工程无缝多相同质结共存3 r和2 h阶段在二硫化钨膜

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摘要

Self-organized semiconductor-semiconductor heterostructures (3R-2H) that coexist in atomically thin 2D monolayers forming homojunctions are of great importance for next-generation nanoelectronics and optoelectronics applications. Herein, we investigated the defect controlled growth of heterogeneous electronic structure within a single domain of monolayer WS2 to enable in-plane homojunctions consisting of alternate 2H semiconducting and 3R semiconducting phases of WS2. X-ray photoelectron, Raman, and photoluminescence spectroscopy along with fluorescence and Kelvin probe force microscopy imaging confirm the formation of homojunctions, enabling a direct correlation between chemical heterogeneity and electronic heterostructure in the atomically thin WS2 monolayer. Quantitative analysis of phase fractions shows 59% stable 2H phase and 41% metastable 3R phase estimated over WS2 flakes of different sizes. Time-resolved fluorescence lifetime imaging confirms distinct contrast between 2H and 3R phases with two distinct lifetimes of 3.2 ns and 1.1 ns, respectively. Kelvin probe force microscopy imaging revealed an abrupt change in the contact potential difference with a depletion width of similar to 2.5 mu m, capturing a difference in work function of similar to 40 meV across the homojunction. Further, the thermal stability of coexisting phases and their temperature dependent optical behavior show a distinct difference among 2H and 3R phases. The investigated aspects of the controlled in plane growth of coexisting phases with seamless homojunctions, their properties, and their thermal stability will enable the development of nanoscale devices that are free from issues of lattice mismatch and grain boundaries.
机译：自组织semiconductor-semiconductor异质结构(3 r-2h)共存自动瘦2 d层形成同质结具有十分重要的意义新一代纳电子学和光电子学的应用。调查的缺陷控制增长在一个异构的电子结构单畴的单层WS2使平面同质结组成的备用2 h半导体和3 r的半导体阶段二硫化钨。光致发光光谱随荧光和开尔文探针力显微镜成像证实同质结的形成,使化学之间的直接关联异质性和电子异质结构自动薄WS2单层。分析阶段的分数显示,59%稳定2 h阶段,41%的亚稳3 r估计阶段结束二硫化钨片不同的大小。荧光寿命成像证实截然不同对比2 h和3 r阶段有两个不同的3.2 ns和1.1 ns有生之年,分别。成像显示联系人的突然改变电位差与损耗的宽度类似于2.5μm,捕捉不同类似于40兆电子伏的功函数同质结。共存的阶段及其温度的依赖光学行为表现出了明显的差异2 h和3 r阶段。控制平面增长共存的阶段无缝的同质结,它们的属性,及其热稳定性将使发展纳米设备,都是免费的从晶格失配和粮食的问题边界。

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