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首页> 外文期刊>Nanoscale >Tunable quantum dot arrays as efficient sensitizers for enhanced near-infrared electroluminescence of erbium ions
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Tunable quantum dot arrays as efficient sensitizers for enhanced near-infrared electroluminescence of erbium ions

机译：可调量子点阵列的效率为增强的近红外增敏剂致发光的铒离子

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摘要

Under electrical pumping conditions, high-efficiency Si-based near-infrared light generation and amplification on a chip have long been pursued for future optical interconnection technology. However, the overall performance of Si-based near-infrared electroluminescence (EL) devices, including the overall efficiency, turn-on voltage and stability under operational conditions, can rarely meet the requirements of monolithic optoelectronic integration. In this work, we designed a confined crystallization growth strategy for fabricating metal oxide quantum dot (QD) arrays embedded in Si-based films as sensitizers of Er3+ ions. Through the precise control of particle size and number density of QD sensitizers, the near-infrared photoluminescence (PL) emission of Er3+ ions can be enhanced by more than three orders of magnitude. More significantly, such hierarchical control over the regular arrangement of QD arrays not only considerably enhances the resonance energy transfer efficiency, but also offers an effective conduction path for carrier transport. Therefore, the corresponding near-infrared EL device exhibits a decreased turn-on voltage of 4.5 V, a high external quantum efficiency of 0.7%, and a long operational lifetime of more than 1000 hours, making this device superior to most Si-based on-chip near-infrared EL devices. This well-controlled metal oxide QD array represents an ideal sensitizer to effectively promote the EL emission of rare earth ions and reduce the turn-on voltage. Meanwhile, the analysis of the carrier transport mechanism paves the way for future research into resonance energy transfer under electrical pumping conditions.
机译：在电注入条件下,高效Si-based近红外光代和放大芯片一直追求未来的光学互连技术。Si-based近红外致发光(EL)设备,包括整体的效率,刺激电压和稳定操作条件,可以很少的要求单片光电集成。工作,我们设计了一个在结晶制造金属氧化物的增长战略量子点阵列嵌入Si-based (QD)电影作为Er3 +离子的增敏剂。精确地控制粒子的大小和数量QD密度增敏剂,近红外光致发光(PL)排放Er3 +离子被超过三个订单的增强大小。控制定期安排QD数组不仅大大提高了共振能量转移效率,但也提供了一个航空运输的有效传导路径。因此,相应的近红外EL设备展览的起始电压下降4.5 V,外部量子效率很高0.7%,长期操作的一生超过1000小时,使这个设备优越大多数Si-based芯片上的近红外EL设备。这个控制金属氧化物QD数组代表了一个理想的敏化剂有效促进稀土离子和EL发射减少刺激电压。分析为载体传输机制为未来研究共振能量电注入条件下转移。

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