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Observation of a low temperature n-p transition in individual titania nanotubes

机译：观察低温阻燃剂的过渡时期个人的二氧化钛纳米管

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Manipulating the transport properties of titania nanotubes (NTs) is paramount in guaranteeing the material's successful implementation in various solid state applications. Here we present the unique semi-conducting properties of individual titania NTs as revealed from thermoelectric and structural studies performed on the same individual NTs. The NTs were in the anatase phase fabricated by anodic oxidation and doped with intrinsic defects created by reducing the lattice thermally. Despite their polycrystalline nature and nanoscale walls, the doped NTs were found to be 4-5 orders of magnitude more electrically conducting than TiO2 nanowires and thin films, with values approaching the bulk single crystal conductivity. The reason for the high conductivity was found to be the high carrier concentration on the order of 10(22) cm(-3), which counteracted the low mobility values similar to 0.006 cm(2) V-1 s(-1). Furthermore, this high level of carrier concentration transitioned the NTs to a degenerate state, which is the first such example in thermally doped titania NTs. More importantly, our study showed the creation of acceptor states along with donor states in individual nanotubes upon lattice reduction. These acceptor levels were found to be active at low temperatures when donor states were not ionized, shifting the Fermi level (E-f) from the conduction band to the valence band.
机译：操纵二氧化钛的传输特性在保证纳米管(nt)是至关重要的材料在不同的成功实现固态的应用程序。独特的半导体性质的个人二氧化钛nt从热电和显示结构研究上执行相同的个人nt。通过阳极氧化和掺杂制作的通过减少产生的内在缺陷晶格热。和掺杂纳米墙nt被发现4 - 5个数量级的电进行比二氧化钛纳米线薄膜,值接近单晶导电性。导电率被发现高载波浓度的10(22)厘米(3),中和低流动性的价值观类似于0.006厘米(2)与它们(1)。这高水平的载体浓度nt的退化状态转换,是第一个这样的例子在热掺杂二氧化钛nt。随着供体受体状态的创造在个人对晶格纳米管减少。活跃在低温时捐赠国家不电离,移动费米能级(E-f)导带与价带。

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