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Addressing input data node failure in radiation-hardened-by-design latches

机译:处理输入数据节点故障radiation-hardened-by-design门闩

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Radiation hardened by design (RHBD) latches incorporate internal node-level redundancy to mitigate single event upset (SEU). However, SEU fault simulation study has revealed that many such SEU tolerant RHBD latches can still possess an SEU at critical input data node. In such RHBD latch architectures, single-point failure of input data node nullifies the effectiveness of internal node-level redundancy. A transient fault (TF) due to a charged particle strike at the input data node propagates to internal nodes including redundant nodes through nominally off input access elements, pass transistors or transmission gates; hence, resulting in upset of the latch. In this paper, we propose simple solutions that circumvent the susceptibility of input data node to SEU at low cost and with enhanced performance. Our proposed solutions ensure complete redundancy of charge storing node(s) in existing RHBD latches, to satisfy high-reliability requirements of logic and memory circuits of spaceborne systems. Through the SEU fault simulation study, it is demonstrated that the proposed solutions work well over the range of deep submicron fabrication technologies (90-22 nm).
机译:抗辐射设计(RHBD)门闩整合内部节点级冗余减轻单一事件打乱(SEU)。故障模拟研究显示,许多这样的SEU宽容RHBD门闩仍然可以拥有一个建在关键输入数据节点。插销结构,单点故障输入数据节点抹杀的有效性内部节点级冗余。由于带电粒子(TF)罢工的输入数据节点传播内部节点包括冗余节点通过名义上输入访问元素,通过晶体管或盖茨传输;门闩。解决方案,规避的易感性输入数据节点在低成本和建增强的性能。确保完成冗余的存储节点(s)在现有RHBD门闩,来满足高可靠性的逻辑和内存的需求星载系统的电路。故障仿真研究,证明了提议的解决方案的工作范围深亚微米工艺技术(90 - 22所示海里)。

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