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A mechanistic study of the photocatalytic activity of AgI–WO3 in an experimentally designed approach toward methylene blue photodegradation

机译:A mechanistic study of the photocatalytic activity of AgI–WO3 in an experimentally designed approach toward methylene blue photodegradation

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The visible light–active AgI/WO3 binary photocatalyst has been characterized using XRD, FTIR spectroscopy, SEM-EDX, cyclic voltammetry (CV), photoluminescence (PL), and UV–vis DRS techniques. An average crystallite size of 37.7 nm was obtained for AgI/WO3, including the hexagonal wurtzite β-AgI and monoclinic WO3 crystallites. Band gap energies of 2.27, 2.87, and 2.52 eV were obtained for AgI, WO3, and AgI/WO3 samples, and the potential positions of the valence and conduction bands were also estimated. The superior photodegradation activity of AgI/WO3 concerning the individual system was confirmed, with a methylene blue (MB) degradation efficiency of 95% in a 5 ppm MB solution. The optimal RSM run with the best response occurred with pH 6.63, catalyst dosage of 1.12 g L−1, irradiation time of 47 min, and CMB of 3.26 ppm. Further, the RSM central point run conditions were pH 6.1, catalyst dosage of 1.05 g L−1, irradiation time of 35 min, and CMB of 5.5 ppm. Radical trapping experiments using scavenging agents revealed that hydroxyl radicals (˙OH) and holes (h+) were the predominant reactive species during MB photodegradation using the AgI/WO3 system. The direct Z-scheme mechanism was the best photocatalytic system to describe MB photodegradation based on the results and potential positions of the VB and CB of the semiconductors.
机译:可见light-active AgI通讯社/ WO3二进制光催化剂已经使用XRD、特征红外光谱、SEM-EDX循环伏安法技术。AgI通讯社/获得了纳米WO3,包括六角纤锌矿型βagi通讯社和单斜WO3微晶。以及2.52 eV得到AgI, WO3,AgI通讯社/ WO3样本,和可能的位置价带和导带也估计。AgI通讯社/ WO3有关个人系统证实,亚甲蓝(MB)退化效率为95% 5 ppm MB的解决方案。最优RSM运行最好的反应发生pH值6.63,催化剂用量为1.12 g L−1,47分钟的辐照时间,招商银行3.26 ppm。此外,RSM中心点运行条件pH值6.1,催化剂用量为1.05 g L−1,辐照时间35分钟,招商银行5.5 ppm。激进的诱捕实验使用清除经纪人透露,羟基自由基(˙哦)孔(h +)是主要的活性物种在MB使用AgI通讯社/ WO3的光降解系统。最好的光催化系统来描述MB根据结果,光降解潜在的职位的VB和CB半导体。

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