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首页> 外文期刊>Optical Engineering >Optical properties of amorphous silicon germanium obtained by low-frequency plasma-enhanced chemical vapor deposition from SiH_(4)+GeF_(4) and from SiH_(4)+GeH_(4)
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Optical properties of amorphous silicon germanium obtained by low-frequency plasma-enhanced chemical vapor deposition from SiH_(4)+GeF_(4) and from SiH_(4)+GeH_(4)

机译：Optical properties of amorphous silicon germanium obtained by low-frequency plasma-enhanced chemical vapor deposition from SiH_(4)+GeF_(4) and from SiH_(4)+GeH_(4)

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摘要

Amorphous silicon germanium (a-Si_(1-x)Ge_(x)) thin films are prepared by low-frequency plasma-enhanced chemical vapor deposition (LF PECVD) on glass substrates, from SiH_(4)+GeF_(4) and SiH_(4)+GeH_(4). These films are deposited under capacitive discharge during 60 min, at a frequency of 110 kHz, substrate temperature of 300 deg C, pressure of 0.6 Torr, and power of 350 W. The germanium gas mixture composition, determined by X_(Ge)velence[GeF_(4)]([GeH_(4)])/[SiH_(4)]+[GeF_(4)]([GeH_(4)]), is varied from 0 to 1. These films are deposited from a (1-X_(Ge))SiH_(4)+(X_(Ge))GeF_(4)(GeH_(4)) mixture, with H_(2) dilution. The refractive index n and absorption coefficient alpha are determined from transmission spectra. The optical energy gap is also determined. The influence of gas sources on the optical parameters is discussed.

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