Simultaneous Reverse Body and Negative Word-Line Biasing Control Scheme for Leakage Reduction of DRAM

Lee D.-S.; Jun Y.-H.; Kong B.-S.

首页> 外文期刊>IEEE Journal of Solid-State Circuits >Simultaneous Reverse Body and Negative Word-Line Biasing Control Scheme for Leakage Reduction of DRAM

【24h】

Simultaneous Reverse Body and Negative Word-Line Biasing Control Scheme for Leakage Reduction of DRAM

机译：Simultaneous Reverse Body and Negative Word-Line Biasing Control Scheme for Leakage Reduction of DRAM

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

In this paper, a simultaneous body and word-line biasing control scheme is described for minimizing the cell leakage current in DRAMs. In the proposed biasing scheme, both the reverse body and negative word-line bias voltages are simultaneously controlled in real time by monitoring the leakage current of a group of replica DRAM cells in different leakage conditions. Experimental results in a 46 nm DRAM technology indicated that the data retention time provided by the proposed scheme is improved by up to 60% as compared to the conventional fixed biasing scheme. They also indicated that the number of failure bits of a DRAM array was substantially reduced by adopting the proposed scheme.

著录项

来源
《IEEE Journal of Solid-State Circuits》 |2011年第10期|2396-2405|共10页
作者
Lee D.-S.; Jun Y.-H.; Kong B.-S.;
展开▼
作者单位

DRAM Development Group, Memory Division, Samsung Electronics, Hwasung, Korea;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类
关键词
Data retention time; gate-induced drain leakage; negative word-line biasing; reverse body biasing; sub-threshold leakage;

Simultaneous Reverse Body and Negative Word-Line Biasing Control Scheme for Leakage Reduction of DRAM

摘要

著录项

相关主题

期刊订阅