Experimental realization of a boron invertedδ-modulation-doped Si/SiGe heterostructure field-effect transistors with quantum well as conducting channel is reported. The proposed device with a 1×100μm{sup}2 gate reveals an extrinsictransconductance as high as 68 mS/mm. Due to the absence of parallel conduction effect under the high current level. operation in this structure, as compared to the normal modulation-doped structure, a wide and flat range of uniform g{sub}m distributionof 2 V together with a high gate to 4raIn breakdown voltage (>16 V) and a current density of 165 mA/mm was obtained at room temperature, which is expected to provide an additional degree of freedom for Si-based device applications.
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