The characteristics of radio-frequency magnetron sputtered BaTa{sub}2O{sub}6 thin films with aluminum (Al) top and indium tin oxide (ITO) bottom electrodes have been investigated as a function of applied field and temperature. The opticaltransmittance in the visible range was in range of 80-90% regardless of the substrate temperature, The dielectric constant increased from 20 to 30 with increasing the substrate temperature and nearly independent of the frequency in the range of 0.3-100kHz but the loss factors increased with increasing the substrate temperature at high frequency. The leakage currents of BaTa{sub}2O{sub}6 thin film are in the order of 10{sup}-6—10{sup}-7 A/cm{sup}2 at the applied field of 1 MV/cm and the charge storagecapacitance (εE{sub}(breakdown)) are 5.64 (100℃), 10.6 (200℃) and 11.8 (300℃)μC/cm{sup}2. From the deposition temperature, voltage polarity and thickness dependence of leakage current, we can conclude that the dominant conduction mechanism isascribed to Schottky emission at high electric field (>1 MV/cm) and hopping conduction at low electric field (<1 MV/cm). The Schottky barrier heights measured are 1.14 eV at Al(+) and 0.8 eV at Al(-).
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