Experimental work on the study of erbium (Er) diffusion and the characterisation of Er-diffused layers required to form waveguide amplifiers in LiNbO_(3) substrate is presented. The presence of active Er in the lattice of LiNbO_(3) is investigated using x-ray photoelectron spectroscopy (XPS), photoluminescence (PL) measurement, and spectroscopic reflectometry. The shift of XPS peaks confirms the oxidized state of Er. The PL spectrum shows a sharp peak at 1530-nm wavelength, indicating the ~(4)I_(15/2) -> ~(4)I_(13/2) lasing transition of Er~(3+). The reflectance spectrum indicates absorption at approx980 and approx1500 nm.
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Indian Institute of Technology Kharagpur, Integrated Optics Laboratory, Microelectronics Centre, Department of Electronics and Electrical and Computer Engineering, Kharagpur-721 302, India;
