Various elements - H, Li, B, Ar, Kr, Xe, Cs, Pb and Bi - have been implanted at 20 - 200 keV and at room temperature up to different fluences into thin fullerene layers evaporated onto polished Si substrates. Subsequently their depth profiles were determined by NRA, NDP, or RBS analysis. These measurements were compared with ion implantation into amorphous carbon and with theory. In most cases the degree of fullerene destruction was monitored by Raman spectroscopy earlier.
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