CMOS Silicon Physical Unclonable Functions Based on Intrinsic Process Variability

Stanzione S.; Puntin D.; Iannaccone G.

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CMOS Silicon Physical Unclonable Functions Based on Intrinsic Process Variability

机译：CMOS Silicon Physical Unclonable Functions Based on Intrinsic Process Variability

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摘要

This paper presents an extreme-low-power mixed-signal CMOS integrated circuit for product identification and anti-counterfeiting, which implements a physical unclonable function operating with a challenge-response scheme. We devise a series of circuits and algorithmic solutions based on the use of a process monitor and on the prediction of the erratic response bits which allow to suppress the effects of temperature, voltage supply and process variations in order to obtain a robust and reliable behavior.

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来源
《IEEE Journal of Solid-State Circuits》 |2011年第6期|1456-1463|共8页
作者
Stanzione S.; Puntin D.; Iannaccone G.;
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作者单位

Dipartimento di Ingegneria dell'Informazione: Elettronica, Informatica, Telecomunicazioni, Università

di Pisa, Pisa, Italy;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类
关键词
Physical unclonable functions; RFID; process monitor; process variability; secure authentication;

CMOS Silicon Physical Unclonable Functions Based on Intrinsic Process Variability

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