A procedure for the extraction of the bulk-charge effect parameter in MOSFET models

F. J. Garcia Sanchez; A. Ortiz-Conde; J. A. SalcedoJ. J. LiouY. Yue

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A procedure for the extraction of the bulk-charge effect parameter in MOSFET models

机译：MOSFET模型中体电荷效应参数的提取过程

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A technique is proposed to extract the bulk-charge effect parameter from the triode region of operation of the MOSFET characteristics. The method involves making two measurements of drain current as a function of gate voltage at two small valuesof the drain voltage. The procedure was tested on synthetic I{sub}d-V{sub}(gs) characteristics modeled with SPICE and simulated by a 2D device simulator. It was also applied to measured I{sub}d-V{sub}(gs) characteristics of real devices. Both constant and normal field dependent mobilities were considered for comparison. Very good agreement is obtained between the parameters used in modeling and simulation and the extracted values.

机译：该文提出一种从MOSFET特性的三极管工作区域中提取体电荷效应参数的方法。该方法涉及在漏极电压的两个小值下对漏极电流进行两次测量，作为栅极电压的函数。该过程在合成I{sub}d-V{sub}（gs）特性上进行了测试，该特性使用SPICE建模，并由2D器件仿真器进行仿真。该技术还应用于真实设备的I{sub}d-V{sub}（gs）特性的测量。考虑了恒定场和法向场相关迁移率进行比较。建模和仿真中使用的参数与提取的值之间获得了很好的一致性。

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来源
《Solid-State Electronics》 |1999年第7期|1295-1298|共4页
作者
F. J. Garcia Sanchez; A. Ortiz-Conde; J. A. SalcedoJ. J. LiouY. Yue;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类一般性问题;
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A procedure for the extraction of the bulk-charge effect parameter in MOSFET models

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