The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications

Scholten A.J.; Smit G.D.J.; De Vries B.A. Tiemeijer L.F. Croon J.A. Klaassen D.B.M. van Langevelde R. Xin Li Weimin Wu Gildenblat G.

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The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications

机译：The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications

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摘要

The surface-potential-based compact MOS model PSP is reviewed with special emphasis to features of interest to analog and RF designers. Various aspects of the model are discussed, such as Gummel symmetry, capacitance reciprocity at V DS = 0 V, parasitic resistances, junction modeling, distortion modeling, and noise modeling. Examples from circuit design are used to illustrate the benefits of the PSP model.

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《IEEE Journal of Solid-State Circuits》 |2009年第5期|1415-1424|共10页
作者
Scholten A.J.; Smit G.D.J.; De Vries B.A. Tiemeijer L.F. Croon J.A. Klaassen D.B.M. van Langevelde R. Xin Li Weimin Wu Gildenblat G.;
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作者单位

NXP-TSMC Res. Center, Eindhoven;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
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关键词
MOSFET; capacitance; distortion; integrated circuit design; noise; surface potential; Gummel symmetry; capacitance reciprocity; compact model council; distortion modeling; junction modeling; noise modeling; parasitic resistances; Compact MOS models; PSP model;

The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications

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