A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm Pamp;subamp;satamp;/subamp; and 26.5 PAE in 16-nm FinFET CMOS

Kun-Da Chu; Steven Callender; Yanjie WangJacques Christophe RudellStefano PelleranoChristopher Hull

首页> 外文期刊>IEEE Journal of Solid-State Circuits >A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm Pamp;subamp;satamp;/subamp; and 26.5 PAE in 16-nm FinFET CMOS

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A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm Pamp;subamp;satamp;/subamp; and 26.5 PAE in 16-nm FinFET CMOS

机译：A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm Pamp;subamp;satamp;/subamp; and 26.5 PAE in 16-nm FinFET CMOS

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摘要

This article presents the design of a dual-mode V-band power amplifier (PA) that enhances the efficiency at power back-off (PBO) using load modulation. The PA utilizes a reconfigurable two-/four-way power combiner to enable two discrete modes of operation–full power and back-off power. The power combiner employs two techniques to further improve the PA efficiency at PBO: 1) usage of transformers with non-uniform turns ratios to reduce the difference in impedance presented to the PA cores between the two modes and 2) utilize a proposed switching scheme to eliminate the leakage inductance associated with the disabled path in back-off power mode (BPM). The two-stage PA achieves a peak gain of 21.4 dB with a fractional BW (fBW) of 22.6% (51–64 GHz). At 65 GHz, the PA has a P&sub&sat&/sub& of +17.9 dBm with an OP&sub&1 dB&/sub& of +13.5 dBm and a peak power added efficiency (PAE) of 26.5% in full-power mode. In BPM, the measured P&sub&sat&/sub&, OP&sub&1 dB&/sub&, and peak PAE are +13.8 dBm, +9.6 dBm, and 18.4%, respectively. The PAE is enhanced by 6% points at a 4.5-dB back-off. The PA is capable of amplifying a 6 Gb/s 16-QAM modulated signal with an EVM&sub&rms&/sub& of ?20.7 dB at an average P&sub&out&/sub&/PAE of +13 dBm/13.6%, respectively. This PA was implemented in 16-nm FinFET, occupies a core area of 0.107 mm&sup&2&/sup&, and operates under a 0.95-V supply.

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来源
《IEEE Journal of Solid-State Circuits》 |2021年第5期|1502-1513|共12页
作者
Kun-Da Chu; Steven Callender; Yanjie WangJacques Christophe RudellStefano PelleranoChristopher Hull;
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作者单位

Intel Corporation, Hillsboro, OR, USA;

Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, USA;

School of Microelectronics, South China University of Technology, Guangzhou, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类基本电子电路;
关键词
Power combiners; Modulation; Impedance; Gain; Wideband; Switches; Power generation; CMOS; FinFET (FF); load modulation; millimeter-wave (mm-wave); power amplifiers (PAs); power combining;

A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm Pamp;subamp;satamp;/subamp; and 26.5 PAE in 16-nm FinFET CMOS

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