首页> 外文期刊>IEEE Journal of Solid-State Circuits >A Compact, Low-Power 40-GBit/s Modulator Driver With 6-V Differential Output Swing in 0.25-formula formulatype='inline' img src='/images/tex/241.gif' alt='mu' /formulam SiGe BiCMOS
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A Compact, Low-Power 40-GBit/s Modulator Driver With 6-V Differential Output Swing in 0.25-formula formulatype='inline' img src='/images/tex/241.gif' alt='mu' /formulam SiGe BiCMOS

机译:A Compact, Low-Power 40-GBit/s Modulator Driver With 6-V Differential Output Swing in 0.25-formula formulatype="inline" img src="/images/tex/241.gif" alt="mu" /formulam SiGe BiCMOS

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摘要

This paper presents a high-speed, low-power modulator driver featuring a novel modified breakdown voltage doubler (BVD) topology. Further speed enhancement and reduction of power consumption is achieved by multiple frequency compensation methods. An optimization method combining small and large-signal analyses is presented. The driver was fabricated in a 0.25- $mu{hbox {m}}$ SiGe BiCMOS technology with $f _{rm T}$ of up to 180 GHz. It features 13-dB differential gain, a small-signal bandwidth of 33.7 GHz and delivers a single-ended output swing of 3 Vpp (6 Vpp differential) at 40 GBit/s into a 50-$Omega$ load consuming only 1.35 W of DC power.

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