Silicon nitride (Si_(3)N_(4)) passivation was attempted on x-cut LiNbO_(3) 10-Gb/s optical integrated modulators. Although silicon nitride films are commonly used to chemically protect semiconductor device surfaces, to our knowledge, applicability of the film to rf optoelectronic devices such as high-speed LiNbO_(3) modulators has not been reported. The purpose of our investigation is to confirm that the silicon nitride passivation films do not degrade the electro-optic (EO) characteristics and bias-drift performance of LiNbO_(3) modulators.
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