A 13.8-ENOB Fully Dynamic Third-Order Noise-Shaping SAR ADC in a Single-Amplifier EF-CIFF Structure With Hardware-Reusing kT/C Noise Cancellation

Tzu-Han Wang; Ruowei Wu; Vasu GuptaXiyuan TangShaolan Li

首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 13.8-ENOB Fully Dynamic Third-Order Noise-Shaping SAR ADC in a Single-Amplifier EF-CIFF Structure With Hardware-Reusing kT/C Noise Cancellation

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A 13.8-ENOB Fully Dynamic Third-Order Noise-Shaping SAR ADC in a Single-Amplifier EF-CIFF Structure With Hardware-Reusing kT/C Noise Cancellation

机译：A 13.8-ENOB Fully Dynamic Third-Order Noise-Shaping SAR ADC in a Single-Amplifier EF-CIFF Structure With Hardware-Reusing kT/C Noise Cancellation

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摘要

To design noise-shaping successive approximation register (NS-SAR) analog-to-digital converters (ADCs) with high resolution and good power efficiency, two key bottlenecks need to be addressed. One is to realize a high-order loop filter with low circuit overhead, and the other is to mitigate the thermal noise. This article presents an NS-SAR ADC that synergistically addresses both challenges. To achieve high-order efficiency, it proposes an innovative error feedback-cascaded integrator feedforward (EF-CIFF) structure that realizes third-order noise shaping using only a single amplifier. It combines the merits of both structures, showing improved robustness, and is free of dc offset concern. On reducing the kT/C noise, this work features a sampling kT/C noise cancellation (SNC) technique that reuses the native hardware of the EF-CIFF structure. An open-loop self-quenching floating-inverter dynamic amplifier (FIDA) is used to support all amplification with low noise and power. Prototyped in 65-nm CMOS, this work achieves 84.8-dB signal-to-noise-distortion ratio (SNDR) with 625-kHz bandwidth (BW) (OSR = 8) and 119 $mu text{W}$ , leading to 182-dB Schreier Figure of Merit (FoM). It uses only 0.8-pF input capacitance, which is $5times $ smaller than prior NS-SAR ADCs with similar oversampling ratio (OSR) and SNDR.

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来源
《IEEE Journal of Solid-State Circuits》 |2021年第12期|3668-3680|共13页
作者
Tzu-Han Wang; Ruowei Wu; Vasu GuptaXiyuan TangShaolan Li;
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作者单位

Department of Electrical and Computer Engineering, Georgia Institute of Technology (GT), Atlanta, GA, USA;

Institute of Microelectronics, Peking University, Beijing, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类基本电子电路;
关键词
Periodic structures; Noise shaping; Standards; Robustness; Complexity theory; Noise cancellation; Couplings; ΔΣ modulator; analog-to-digital converter (ADC); dynamic amplifier; floating inverter amplifier; noise cancellation; noise shaping; successive approximation register (SAR);

A 13.8-ENOB Fully Dynamic Third-Order Noise-Shaping SAR ADC in a Single-Amplifier EF-CIFF Structure With Hardware-Reusing kT/C Noise Cancellation

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