A 0.55 THz Near-Field Sensor With a μm -Range Lateral Resolution Fully Integrated in 130 nm SiGe BiCMOS

Janusz Grzyb; Bernd Heinemann; Ullrich R. Pfeiffer

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A 0.55 THz Near-Field Sensor With a μm -Range Lateral Resolution Fully Integrated in 130 nm SiGe BiCMOS

机译：A 0.55 THz Near-Field Sensor With a μm -Range Lateral Resolution Fully Integrated in 130 nm SiGe BiCMOS

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This paper presents a room-temperature operating superresolution terahertz (THz) planar near-field solid-state sensor breaking the diffraction limit. Contrary to classical superresolution imagers implemented in the optical domain, the sensor features inbuilt illumination, evanescent-field sensing, and detection on a single chip, eliminating the need for any external optics. Both metallic and dielectric objects can be imaged with the sensor and mapped into a monotonic sensor response. It is operated around 533–555 GHz in 130 nm SiGe HBT technology and is capable of resolving structural details with a μm -range resolution and a high response of up to 21.7 μA with no amplification stages in the readout path. Here, the stop-band characteristic of a differentially driven 3-D split-ring resonator with high spatial confinement of evanescent surface fields is exploited as an object-tunable transmission modulator inserted in-plane between a tunable 3-push Colpitts oscillator and a broadband power detector. A separate antenna-coupled oscillator breakout provides a radiated power of up to 45 μW (?13.4 dBm). This paper further demonstrates the 2-D scanned superresolution image with a remarkable SNR of up to 40 dB for the sensor operating at dc.

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来源
《IEEE Journal of Solid-State Circuits》 |2016年第12期|3063-3077|共15页
作者
Janusz Grzyb; Bernd Heinemann; Ullrich R. Pfeiffer;
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作者单位

IHP GmbH, Frankfurt, Germany;

Institute for High-Frequency and Communication Technology, University of Wuppertal, Wuppertal, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类基本电子电路;
关键词
Image resolution; Detectors; Optical resonators; Resonant frequency; Lighting; Surface topography;

A 0.55 THz Near-Field Sensor With a μm -Range Lateral Resolution Fully Integrated in 130 nm SiGe BiCMOS

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