A Differential Oscillator Injection Locking Technique for an 8 GHz Outphasing Modulator With 22.7 Modulation Efficiency

Mohammad S. Mehrjoo; James F. Buckwalter

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A Differential Oscillator Injection Locking Technique for an 8 GHz Outphasing Modulator With 22.7 Modulation Efficiency

机译：A Differential Oscillator Injection Locking Technique for an 8 GHz Outphasing Modulator With 22.7 Modulation Efficiency

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摘要

A wideband technique for outphasing modulation is introduced that efficiently generates outphasing modulation using differential injection locking between oscillators without requiring digital signal processing. Complex modulation with outphasing signals is demonstrated with two edge oscillators generating outphasing signals locked to a central master oscillator. The coupled-oscillator outphasing modulator circuit is implemented in 45 nm SOI CMOS and delivers 9.2 dBm to a 50 Ω external load at 8 GHz while consuming only 36.5 mW to achieve a 22.7% overall system efficiency. The modulator provides 30 dB of dynamic range and the measurements demonstrate complex waveforms such as 64-quadrature amplitude modulation with 2.1% error vector magnitude at 60 Mb/s.

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来源
《IEEE Journal of Solid-State Circuits》 |2016年第12期|3093-3102|共10页
作者
Mohammad S. Mehrjoo; James F. Buckwalter;
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作者单位

University of California at Santa Barbara, Santa Barbara, CA, USA;

RFIC Design Team, Qualcomm Inc., San Diego, CA, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类基本电子电路;
关键词
Tuning; Injection-locked oscillators; Frequency modulation; Power generation; Voltage-controlled oscillators;

A Differential Oscillator Injection Locking Technique for an 8 GHz Outphasing Modulator With 22.7 Modulation Efficiency

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