Design and Analysis of a W-Band SiGe Direct-Detection-Based Passive Imaging Receiver

Gilreath L.; Jain V.; Heydari P.

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Design and Analysis of a W-Band SiGe Direct-Detection-Based Passive Imaging Receiver

机译：Design and Analysis of a W-Band SiGe Direct-Detection-Based Passive Imaging Receiver

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摘要

A W-band direct-detection-based receiver front-end for millimeter-wave passive imaging in a 0.18-$muhbox{m}$ BiCMOS process is presented. The proposed system is comprised of a direct-detection front-end architecture employing a balanced LNA with an embedded Dicke switch, power detector, and baseband circuitry. The use of a balanced LNA with an embedded Dicke switch minimizes front-end noise figure, resulting in a great imaging resolution. The receiver chip achieves a measured responsivity of 20–43 MV/W with a front-end 3-dB bandwidth of 26 GHz, while consuming 200 mW. The calculated NETD of the SiGe receiver chip is 0.4 K with a 30 ms integration time. This work demonstrates the possibility of silicon-based system-on-chip solutions as lower cost alternatives to compound semiconductor multi-chip imaging modules.

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《IEEE Journal of Solid-State Circuits》 |2011年第10期|2240-2252|共13页
作者
Gilreath L.; Jain V.; Heydari P.;
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作者单位

Advanced Technologies Department, Northrop Grumman Aerospace Systems, Redondo Beach,;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
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关键词
Dicke switch; direct detection; low noise amplifier (LNA); passive imaging; power detector; radiometer; silicon- germanium;

Design and Analysis of a W-Band SiGe Direct-Detection-Based Passive Imaging Receiver

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