A 22.9–38.2-GHz Dual-Path Noise-Canceling LNA With 2.65–4.62-dB NF in 28-nm CMOS

Zhixian Deng; Jie Zhou; Huizhen Jenny QianXun Luo

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A 22.9–38.2-GHz Dual-Path Noise-Canceling LNA With 2.65–4.62-dB NF in 28-nm CMOS

机译：A 22.9–38.2-GHz Dual-Path Noise-Canceling LNA With 2.65–4.62-dB NF in 28-nm CMOS

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摘要

In this article, a 22.9–38.2-GHz dual-path noise-canceling low noise amplifier (LNA) is proposed, which can achieve a low noise figure (NF) by reducing the noise of both paths. Such LNA consists of one common gate (CG) amplifier with one three-stage transformer, one resistive feedback common-source (CS) amplifier, and two amplitude-adjusting amplifiers. The three-stage transformer is used in the CG amplifier to provide gain-boosting, noise-reducing, and wideband inter-stage matching operation, simultaneously. Meanwhile, amplitude-adjusting amplifiers with reconfigurable phase-tuning lines are utilized in both paths to optimize the noise-canceling performance. To verify the aforementioned principle, a dual-path noise-canceling LNA is implemented and fabricated using a conventional 28-nm CMOS technology. The proposed LNA consumed 18.9 mW under a 0.9-V supply. The measured NF is 2.65–4.62 dB within the operating frequency range of 22.9–38.2 GHz, while the peak gain is 14.5 dB. The in-band input 1-dB compression point (IPsub1 dB/sub) and input third-order intercept point (IIP3) are ?13.2 to ?6.6 and ?3.6 to 3.2 dBm, respectively.

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来源
《IEEE Journal of Solid-State Circuits》 |2021年第11期|3348-3359|共12页
作者
Zhixian Deng; Jie Zhou; Huizhen Jenny QianXun Luo;
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作者单位

Center for Advanced Semiconductor and Integrated Micro-System, University of Electronic Science and Technology of China, Chengdu, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类基本电子电路;
关键词
Noise measurement; Topology; Wideband; Boosting; Equivalent circuits; Transistors; Logic gates; CMOS; low noise amplifier (LNA); noise canceling; mm-wave; wireless;

A 22.9–38.2-GHz Dual-Path Noise-Canceling LNA With 2.65–4.62-dB NF in 28-nm CMOS

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