...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 670-GHz 4 × 2 Oscillator–Radiator Array Achieving 7.4-dBm EIRP in 40-nm CMOS
【24h】

A 670-GHz 4 × 2 Oscillator–Radiator Array Achieving 7.4-dBm EIRP in 40-nm CMOS

机译：A 670-GHz 4 × 2 Oscillator–Radiator Array Achieving 7.4-dBm EIRP in 40-nm CMOS

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相关主题

摘要

A 670-GHz terahertz source array is implemented in 40-nm bulk CMOS technology. To increase the frequency and power of the source, a compact and 1-D scalable oscillator–radiator topology that works on the third harmonic is proposed. In order to avoid the gate transistor node from loading the tank at the output frequency, a filtering feedback network is used to feed through the fundamental signal while filtering the third harmonic. The source consists of inline-formula tex-math notation="LaTeX"$4times 2$ /tex-math/inline-formula oscillator cells with different common- and differential-mode coupling mechanisms that are built into the slotline resonant tanks. These slotlines build up an inline-formula tex-math notation="LaTeX"$E$ /tex-math/inline-formula-field pattern that radiates the signal to the far-field. The chip is assembled on a hyperhemispherical lens that suppresses substrate modes and further increases the directivity of the source. The full array and pads have a die size of inline-formula tex-math notation="LaTeX"$0.75times 1$ /tex-math/inline-formula.15 mmsup2/sup. The source can be tuned in the range of 660.8–676.6 GHz. It has a maximum measured EIRP of 7.4 dBm and ?16.1 dBm radiated output power while consuming only 99.7 mW. The source also has a measured phase noise at 1- and 10-MHz offsets of ?69 and ?93 dBc/Hz, respectively.

著录项

获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号